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#author("2025-06-06T22:29:47+09:00","default:kei","kei") #author("2025-06-30T22:37:39+09:00","default:kei","kei") [[原著論文（古い順）はこちら>原著論文]] ---- #norelated 167. "Frequency-modulation atomic force microscopy observation of 1T-TaS&subsc{2}; in the nearly commensurate charge density wave phase" --T. Ono, T. Shigeno, Y. Yasui, M. Fukuda, T. Ozaki, K. Ueno and Y. Sugimoto --Appl. Phys. Lett., accepted for publication (2025) --Appl. Phys. Lett. ''126'' (2025) 263102 --DOI:[[10.1063/5.0273456:https://doi.org/10.1063/5.0273456]] 166. "Dimensionality-induced transition from degenerate to non-degenerate states in Nb-doped WSe&subsc{2};" --K. Kanahashi, I. Tanaka, T. Nishimura, K. Aso, A. K. A. LU, S. Morito, L. Chen, T. Kakeya, S. Watanabe, Y. Oshima, Y. Yamada-Takamura, K. Ueno, A. Azizi, K. Nagashio --ACS Nano ''19'' (2025) 10244-10254 --DOI:[[10.1021/acsnano.4c17660:https://doi.org/10.1021/acsnano.4c17660]] 165. "Spatial and reconfigurable control of photoluminescence from single-layer MoS&subsc{2}; using a strained VO&subsc{2};-based Fabry-Perot cavity" --K. Nakayama, S. Toida, T. Endo, M. Inada, S. Sato, H. Tani, K. Watanabe, T. Taniguchi, K. Ueno, Y. Miyata, K. Matsuda, and M. Yamamoto --Appl. Phys. Lett. ''125'' (2024) 223106 --DOI:[[10.1063/5.0236517:https://doi.org/10.1063/5.0236517]] 164. "Contact Properties on a Semiconducting MoTe&subsc{2}; Crystal Using Polymorphic Structures" --T. Xie, M. Ke, P. Krüger, K. Ueno, and N. Aoki --ACS Appl. Electron. Mater. ''6'' (2024) 7026–7034 --DOI:[[10.1021/acsaelm.4c01369:https://doi.org/10.1021/acsaelm.4c01369]] 163. "Realization of single MoTe&subsc{2}; crystal in-plane TFET by laser-induced doping technique" --T. Xie, M. Ke, K.Ueno, K. Watanabe, T. Taniguchi, and N. Aoki --Appl. Phys. Lett. ''124'' (2024) 211904 --DOI:[[10.1063/5.0197172:https://doi.org/10.1063/5.0197172]] 162. "Single-gate MoS&subsc{2}; Tunnel FET with Thickness-Modulated Homojunction" --T. Fukui, T. Nishimura, Y. Miyata, K. Ueno, T. Taniguchi, K. Watanabe, K. Nagashio --ACS Appl. Mater. Interfaces ''16'' (2024) 8993-9001 --DOI:[[10.1021/acsami.3c15535:https://doi.org/10.1021/acsami.3c15535]] 161. "Coherent optical response driven by non-equilibrium electron-phonon dynamics in a layered transition-metal dichalcogenide" --T. Fukuda, K. Makino, Y. Saito, P. Fons, A. Ando, T. Mori, R. Ishikawa, K. Ueno, J. Afalla, and M. Hase --APL Materials ''12'' (2024) 021102 --DOI:[[10.1063/5.0188537:https://doi.org/10.1063/5.0188537]] 160. "Work function modulation of Bi/Au bilayer system toward p-type WSe&subsc{2}; FET" --R. Nakajima, T. Nishimura, K. Ueno, K. Nagashio --ACS Appl. Electron. Mater. ''6'' (2024) 144–149 --DOI:[[10.1021/acsaelm.3c01091:https://doi.org/10.1021/acsaelm.3c01091]] 159. "Realization of MoTe&subsc{2}; CMOS inverter by contact doping and channel encapsulation" --T. Xie, M. Ke, K. 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"Influence of Effective Mass on Carrier Concentration for PEDOT:PSS and S-PEDOT Thin Films Studied by Ellipsometry and Hall Measurement" --R. Sato, Y. Wasai, Y. Izumi, K. Ueno, and H. Shirai --J. Phys. Chem. C ''127'' (2023) 13196-13206 --DOI:[[10.1021/acs.jpcc.3c01497:https://doi.org/10.1021/acs.jpcc.3c01497]] 155. "Photoinduced Structural Dynamics of 2H-MoTe&subsc{2}; Under Extremely High-Density Excitation Conditions" --T. Fukuda, U. Ozaki, S. Jeong, Y. Arashida, K. En-ya, S. Yoshida, P. Fons, J. Fujita, K. Ueno, M. Hase, M. Hada --J. Phys. Chem. C ''127'' (2023) 13149-13156 --DOI:[[10.1021/acs.jpcc.3c02838:https://doi.org/10.1021/acs.jpcc.3c02838]] 154. "Ultrafast melting of charge-density wave fluctuations at room temperature in 1T-TiSe&subsc{2}; monitored under non-equilibrium conditions" --Y. Mizukoshi, T. Fukuda, Y. Komori, R. Ishikawa, K. Ueno and M. Hase --Appl. Phys. Lett. ''122'' (2023) 243101 --DOI:[[10.1063/5.0153161:https://doi.org/10.1063/5.0153161]] 153. "'''p'''-type conversion of WS&subsc{2}; and WSe&subsc{2}; by position-selective oxidation doping and its application in top gate transistors" --R. Kato, H. Uchiyama, T. Nishimura, K. Ueno, T. Taniguchi, K. Watanabe, E. Chen, K. Nagashio --ACS Appl. Mater. Interfaces ''15'' (2023) 26977–26984 --DOI:[[10.1021/acsami.3c04052:https://doi.org/10.1021/acsami.3c04052]] 152. "Fermi Pressure and Coulomb Repulsion Driven Rapid Hot Plasma Expansion in a van der Waals Heterostructure" --J. Choi, J. Embley, D.D. Blach, R. Perea-Causín, D. Erkensten, D.S. Kim, L. Yuan, W.Y. Yoon, T. Taniguchi, K. Watanabe, K. Ueno, E. Tutuc, S. Brem, E. Malic, X. Li, and L. Huang --Nano Lett. ''23'' (2023) 4399–4405 --DOI:[[10.1021/acs.nanolett.3c00678:https://doi.org/10.1021/acs.nanolett.3c00678]] 151. "Terahertz emission from transient currents and coherent phonons in layered MoSe&subsc{2}; and WSe&subsc{2};" --J. Afalla, J. Muldera, S. Takamizawa, T. Fukuda, K. Ueno, M. Tani, and M. Hase --J. Appl. Phys. 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Interfaces ''14'' (2022) 25659–25669 --DOI:[[10.1021/acsami.2c03198:https://doi.org/10.1021/acsami.2c03198]] 142. "Mist chemical vapor deposition of Al&subsc{1−x};Ti&subsc{x};O&subsc{y}; thin films and their application to a high dielectric material" -- A. Rajib, A. Kuddus, K. Yokoyama, T. Shida, K. Ueno, and H. Shirai --J. Appl. Phys. ''131'' (2022) 105301 --DOI:[[10.1063/5.0073719:https://doi.org/10.1063/5.0073719]] 141. "Photo-induced Tellurium segregation in MoTe&subsc{2};" --T. Fukuda, R. Kaburauchi, Y. Saito, K. Makino, P. Fons, K. Ueno and M. Hase --Phys. Stat. Solidi RRL, ''16'' (2022) 2100633 --DOI:[[10.1002/pssr.202100633:https://doi.org/10.1002/pssr.202100633]] 140."Quantitative Determination of Contradictory Band Gap Values of Bulk PdSe&subsc{2}; from Electrical Transport Properties" --W. Nishiyama, T. Nishimura, K. Ueno, T. Taniguchi, K. Watanabe, and K. Nagashio --Adv. Func. Mater. 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