国際学会 の履歴(No.2)

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• 国際学会 へ行く。
  • 1 (2007-09-20 (木) 22:53:18)
  • 2 (2009-07-03 (金) 18:33:30)
  • 3 (2011-01-20 (木) 23:30:20)
  • 4 (2011-03-04 (金) 10:01:50)
  • 5 (2012-05-08 (火) 13:50:07)
  • 6 (2013-05-24 (金) 20:21:23)
  • 7 (2013-07-30 (火) 19:29:00)
  • 8 (2014-07-04 (金) 18:16:19)
  • 9 (2014-09-26 (金) 19:06:01)
  • 10 (2015-07-27 (月) 14:28:02)
  • 11 (2016-02-24 (水) 07:43:59)
  • 12 (2016-05-24 (火) 22:28:38)
  • 13 (2019-06-25 (火) 12:00:45)

国際学会講演（自ら講演したもの）

1. "Heteroepitaxy of layered compound semiconductor GaSe onto GaAs surfaces for very effective passivation of nanometer structures", K. Ueno, H. Abe, K. Saiki, A. Koma, H. Oigawa and Y. Nannichi, 5th International Conference on Modulated Semiconductor Structures, July 8-12, 1991, Nara, PA-27.
2. "Heteroepitaxy of layered III-VI semiconductor GaSe on hydrogen-terminated Si(111) surfaces", K. Ueno, K. Y. Liu, Y. Fujikawa, K. Saiki and A. Koma, 1992 International Conference on Solid Stated Devices and Materials, August 26-28, 1992, Tsukuba, S-II-20.
3. "Van der Waals epitaxy on hydrogen-terminated Si(111) surfaces and AFM investigation of its growth mechanism", K. Ueno, M. Sakurai and A. Koma, Eighth International Conference on Molecular Beam Epitaxy, August 29 - September 2, 1994, Osaka, B4-4.
4. "Atomic force microscope observation of ultrathin films of III-VI lamellar chalcogenides grown by van der Waals epitaxy", K. Ueno, K. Yamada, K. Saiki and A. Koma, 188th Meeting of The Electrochemical Society, October 8-13, 1995, Chicago, 639.
5. "STM observation of Li, Na, K or Cs adsorbed layered material surfaces", K. Kataoka, K. Ueno and A. Koma, The 3rd International Colloquium on Scanning Tunneling Microscopy, December 7-9, 1995, Kanazawa, 35.
6. "Investigation of the growth mechanism of layered semiconductor GaSe", K. Ueno, N. Takeda, K. Sasaki and A. Koma, Eighth International Conference on Solid Films and Surfaces, July 1-5, 1996, Osaka, TuP-36.
7. "Nano-structure fabrication using selective growth on nano-size patterned drawn by scanning probe microscope", K. Sasaki, K. Ueno and A. Koma, 1996 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, November 4-7, 1996, Sapporo, Tu4-5.
8. "Fabrication of C60 nanostructures by selective growth on GaSe/MoS2 and InSe/MoS2 heterostructure substrates", K. Ueno, K. Sasaki, T. Nakahara and A. Koma, The Fourth International Symposium on Atomically Controlled Surfaces and Interfaces, October 27-30, 1997, Tokyo, PB25.
9. "A novel method to fabricate a molecular quantum structure: selective growth of C60 on layered material heterostructures", K. Ueno, K. Sasaki, K. Saiki and A. Koma, 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, May 31-June 4, 1998, Sapporo, Tu4-8.
10. "Electron-energy-loss spectroscopy of KxC60 and K-halides: Comparison in the K3p excitation region", K. Ueno, Y. Uchino, K, Iizumi, K. Saiki and A. Koma, First Vauum and Surface Conference of Asia and Australia, September 8-10, 1999, Tokyo, FrP-61.
11. "Fabrication of GaAs quantum dots on a Si(111) substrate terminated by bilayer-GaSe", K. Ueno, K. Saiki and A. Koma, Third International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, September 10-14, 2000, Sapporo, Tu1-11.
12. "Fabrication of compound-semiconductor quantum dots on a Si(111) substrate terminated by bilayer-GaSe", K. Ueno, K. Saiki and A. Koma, 25th International Conference on the Physics of Semiconductors, September 17-22, 2000, Osaka, H056.
13. "A novel substrate to fabricate epitaxial films of various organic molecular crystals: bilayer-GaSe terminated Si(111)", K. Ueno, K. Saiki and A. Koma, International Chemical Congress of Pacific Basin Societies 2000, December 14-19, 2000, Honolulu.
14. "Low-energy electron energy loss spectroscopy of monolayer and thick La@C82 films grown on MoS2 substrates", K. Ueno, Y. Uchino, K. Iizumi, K. Saiki, A. Koma, Y. Inada, K. Nagai, Y. Iwasa and T. Mitani, International Symposium on Nanonetwork Materials: Fullerenes, Nanotubes, and Related Systems, January 15-18, 2001, Kamakura, 2P23.
15. "Highly-stable passivation of a Si(111) surface using bilayer-GaSe", K. Ueno, H. Shirota, T. Kawamura, T. Shimada, K. Saiki and A. Koma, The 8th International Conference on the Formation of Semiconductor Interfaces, June 11-15, 2001, Sapporo, Th2-3.
16. "Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(001) substrate", K. Ueno, S. Tokuchi, K. Saiki and A. Koma, The Thirteenth International Conference on Crystal Growth, July 30 - August 4, 2001, Kyoto, 04a-SB3-19.
17. "Nanoscale anodic oxidation on a Si(111) surface terminated by bilayer-GaSe", K. Ueno, R. Okada, K. Saiki and A. Koma, Yamada Conference LVII on "Atomic-scale surface designing for functional low-dimensional materials", November 14 - 16, 2001, Tsukuba, W39.
18. "Fabrication of a pentacene field-effect transistor on a mica gate substrate and shielding of injected carriers from interfacial potassium ions", A. Matsumoto, R. Onoki, S. Ikeda, K. Saiki and K. Ueno, Fourth International Conference on Molecular Electronics and Bioelectronics (M&BE4), March 14 - 16, 2007, Tokyo, 2P-25.
19. "Graphene transparent electrodes for organic polymer solar cells", M. Yoshida, K. Suganuma, H. Shirai and K. Ueno, Graphene Tokyo 2009, July 25 - 26, 2009, Tokyo.
20. "Organic field-effect transistors with graphene electrodes", K. Suganuma, M. Yoshida and K. Ueno, Graphene Tokyo 2009, July 25 - 26, 2009, Tokyo.