原著論文（新しい順）

Last-modified: 2023-08-16 (水) 01:05:51 (47d)

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157. "Soft X-ray Photoelectron Momentum Microscope for Multimodal Valence Band Stereography"

F. Matsui, K. Hagiwara, E. Nakamura, T. Yano, H. Matsuda, Y. Okano, S. Kera, E. Hashimoto, S. Koh, K. Ueno, T. Kobayashi, E. Iwamoto, K. Sakamoto, S. Tanaka, and S. Suga
Rev. Sci. Instrum. 94 (2023) 083701
DOI:10.1063/5.0154156

156. "Influence of Effective Mass on Carrier Concentration for PEDOT:PSS and S-PEDOT Thin Films Studied by Ellipsometry and Hall Measurement"

R. Sato, Y. Wasai, Y. Izumi, K. Ueno, and H. Shirai
J. Phys. Chem. C 127 (2023) 13196-13206
DOI:10.1021/acs.jpcc.3c01497

155. "Photoinduced Structural Dynamics of 2H-MoTe2 Under Extremely High-Density Excitation Conditions"

T. Fukuda, U. Ozaki, S. Jeong, Y. Arashida, K. En-ya, S. Yoshida, P. Fons, J. Fujita, K. Ueno, M. Hase, M. Hada
J. Phys. Chem. C 127 (2023) 13149-13156
DOI:10.1021/acs.jpcc.3c02838

154. "Ultrafast melting of charge-density wave fluctuations at room temperature in 1T-TiSe2 monitored under non-equilibrium conditions"

Y. Mizukoshi, T. Fukuda, Y. Komori, R. Ishikawa, K. Ueno and M. Hase
Appl. Phys. Lett. 122 (2023) 243101
DOI:10.1063/5.0153161

153. "p-type conversion of WS2 and WSe2 by position-selective oxidation doping and its application in top gate transistors"

R. Kato, H. Uchiyama, T. Nishimura, K. Ueno, T. Taniguchi, K. Watanabe, E. Chen, K. Nagashio
ACS Appl. Mater. Interfaces 15 (2023) 26977–26984
DOI:10.1021/acsami.3c04052

152. "Fermi Pressure and Coulomb Repulsion Driven Rapid Hot Plasma Expansion in a van der Waals Heterostructure"

J. Choi, J. Embley, D.D. Blach, R. Perea-Causín, D. Erkensten, D.S. Kim, L. Yuan, W.Y. Yoon, T. Taniguchi, K. Watanabe, K. Ueno, E. Tutuc, S. Brem, E. Malic, X. Li, and L. Huang
Nano Lett. 23 (2023) 4399–4405
DOI:10.1021/acs.nanolett.3c00678

151. "Terahertz emission from transient currents and coherent phonons in layered MoSe2 and WSe2"

J. Afalla, J. Muldera, S. Takamizawa, T. Fukuda, K. Ueno, M. Tani, and M. Hase
J. Appl. Phys. 133 (2023) 165103
DOI:10.1063/5.0146489

150."Carrier Transport Properties in Few-Layer WS0.3Se1.7/(WOx)WS0.3Se1.7 Lateral p+-n Junctions Using a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFETs) Structure"

A. Kuddus, K. Yokoyama, W. Fan, K. Ueno, H. Shirai
ACS Appl. Electron. Mater. 5 (2023) 1546–1557
DOI:10.1021/acsaelm.2c01598

149."Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics"

H. Ogura, S. Kawasaki, Z. Liu, T. Endo, M. Maruyama, Y. Gao, Y. Nakanishi, H.E. Lim, K. Yanagi, T. Irisawa, K. Ueno, S. Okada, K. Nagashio, Y. Miyata
ACS Nano 17 (2023) 6545-6554
DOI:10.1021/acsnano.2c11927

148."Enhanced contact properties of MoTe2-FET via laser-induced heavy doping"

T. Xie, K. Fukuda, M. Ke, P. Krüger, K. Ueno, G.-H. Kim, N. Aoki
Jpn. J. Appl. Phys. 62 (2023) SC1010
DOI:10.35848/1347-4065/aca67e

147. "Emergence of interlayer coherence in twist-controlled graphene double layers"

K. A. Lin, N. Prasad, G. W. Burg, B. Zou, K. Ueno, K. Watanabe, T. Taniguchi, A. H. MacDonald, and E. Tutuc
Phys. Rev. Lett. 129 (2022) 187701
DOI:10.1103/PhysRevLett.129.187701

146. "Is band gap of bulk PdSe2 located really in far infrared region? Determination by Fourier Transform Photocurrent Spectroscopy"

W. Nishiyama, T. Nishimura, M. Nishioka, K. Ueno, S. Iwamoto, and K. Nagashio
Adv. Photonics Res. 3 (2022) 2200231
DOI:10.1002/adpr.202200231

145. "Diffused Beam Energy to Dope van der Waals Electronics and Boost Their Contact Barrier Lowering"

C.-Y. Lin, M.-P. Lee, Y.-M. Chang, Y.-T. Tseng, F. -S. Yang, M. Li, J.-C. Chen, C.-F. Chen, M.-Y. Tsai, Y.-C. Lin, K. Ueno, M. Yamamoto, S.-T. Lo, C.-H. Lien, P.-W. Chiu, K. Tsukagoshi, W.-W. Wu, Y.-F. Lin
ACS Appl. Mater. Interfaces 14 (2022) 41156–41164
DOI:/10.1021/acsami.2c07679

144. "Reversible Charge-polarity Control for Multioperation-mode Transistors Based on van der Waals Heterostructures"

C.-F. Chen, S.-H. Yang, M.-P. Lee, M.-Y. Tsai, F.-S. Yang, Y.-M. Chang, C.-Y. Lin, M. Li, K.-C. Lee, K. Ueno, Y. Shi, C. H. Lien, W.-W. Wu, P.-W. Chiu, S.-T. Lo, and Y.-F. Lin
Adv. Sci., 9 (2022) 2106016
DOI:10.1002/advs.202106016

143. "Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN"

T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio
ACS Appl. Mater. Interfaces 14 (2022) 25659–25669
DOI:10.1021/acsami.2c03198

142. "Mist chemical vapor deposition of Al1−xTixOy thin films and their application to a high dielectric material"

A. Rajib, A. Kuddus, K. Yokoyama, T. Shida, K. Ueno, and H. Shirai
J. Appl. Phys. 131 (2022) 105301
DOI:10.1063/5.0073719

141. "Photo-induced Tellurium segregation in MoTe2"

T. Fukuda, R. Kaburauchi, Y. Saito, K. Makino, P. Fons, K. Ueno and M. Hase
Phys. Stat. Solidi RRL, 16 (2022) 2100633
DOI:10.1002/pssr.202100633

140."Quantitative Determination of Contradictory Band Gap Values of Bulk PdSe2 from Electrical Transport Properties"

W. Nishiyama, T. Nishimura, K. Ueno, T. Taniguchi, K. Watanabe, and K. Nagashio
Adv. Func. Mater. 32 (2022) 2108061
DOI:10.1002/adfm.202108061

139."Mist chemical vapor deposition of crystalline MoS2 atomic layer films using sequential mist supply mode and its application in field-effect transistors"

A. Kuddus, A. Rajib, K. Yokoyama, T. Shida, K. Ueno and H. Shirai
Nanotechnology 33 (2022) 045601
DOI:10.1088/1361-6528/ac30f4

138."Intrinsic Electronic Transport Properties and Carrier Densities in PtS2 and SnSe2: Exploration of n+-Source for 2D Tunnel FETs"

Y. Sato, T. Nishimura, D. Duanfei, K. Ueno, K. Shinokita, K. Matsuda and K. Nagashio
Adv. Electron. Mater. 7 (2021) 2100292
DOI:10.1002/aelm.202100292

137."Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory"

T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio
ACS nano 15 (2021) 6658–6668
DOI:10.1021/acsnano.0c10005

136."AlOx Thin Films Synthesized by Mist Chemical Vapor Deposition, Monitored by a Fast-Scanning Mobility Particle Analyzer, and Applied as a Gate Insulating Layer in the Field-Effect Transistors"

A. Rajib, A. Kuddus, T. Shida, K. Ueno, and H. Shirai
ACS Appl. Electron. Mater. 3 (2021) 658–667
DOI:10.1021/acsaelm.0c00758

135."Twist Angle-Dependent Interlayer Exciton Lifetimes in van der Waals Heterostructures"

J. Choi, M. Florian, A. Steinhoff, D. Erben , K. Tran, D. S. Kim, L. Sun, J. Quan, R. Claassen, S. Majumder, J. A. Hollingsworth, T. Taniguchi, K. Watanabe, K. Ueno, A. Singh, G. Moody, F. Jahnke, and X. Li
Phys. Rev. Lett. 126 (2021) 047401
DOI:10.1103/PhysRevLett.126.047401

134."Enhanced Exciton-Exciton Collisions in an Ultraflat Monolayer MoSe2 Prepared through Deterministic Flattening"

T. Hotta, A. Ueda, S. Higuchi, M. Okada, T. Shimizu, T. Kubo, K. Ueno, T. Taniguchi, K. Watanabe, R. Kitaura
ACS Nano 15 (2021) 1370–1377
DOI:10.1021/acsnano.0c08642

133."All 2D heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality"

K. Nakamura, N. Nagamura, K. Ueno, T. Taniguchi, K. Watanabe, K. Nagashio
ACS Appl. Mater. Interfaces 12 (2020) 51598-51606
DOI:10.1021/acsami.0c13233

132."Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage"

T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio
Small 16 (2020) 2004907
DOI:10.1002/smll.202004907

131."Exciton diffusion in hBN-encapsulated monolayer MoSe2"

T. Hotta, S. Higuchi, A. Ueda, K. Shinokita, Y. Miyauchi, K. Matsuda, K. Ueno, T. Taniguchi, K. Watanabe, and R. Kitaura
Phys. Rev. B 102 (2020) 115424
DOI:10.1103/PhysRevB.102.115424

130."Facile and reversible carrier-type manipulation of layered MoTe2 toward long-term stable electronics"

M. Li, C.-Y. Lin, Y.-M. Chang, S.-H. Yang, M.-P. Lee, C.-F. Chen, K.-C. Lee, F.-S. Yang, Y. Chou, Y.-C. Lin, K. Ueno, Y. Shi, Y.-C. Chou, K. Tsukagoshi, Y.-F. Lin
ACS Appl. Mater. Interfaces 12 (2020) 42918-42924
DOI:10.1021/acsami.0c09922

129."Effect of thermally annealed atomic-layer-deposited AlOx/chemical tunnel oxide stack layer at the PEDOT:PSS/n-type Si interface to improve its junction quality"

Md E. Karim, Y. Nasuno, A. Kuddus, T. Ukai, S. Kurosu, M. Tokuda, Y. Fujii, T. Hanajiri, R. Ishikawa, K. Ueno, and H. Shirai
J. Appl. Phys. 128 (2020) 045305
DOI:10.1063/5.0007918

128."Flat bands in twisted bilayer transition metal dichalcogenides"

Z. Zhang, Y. Wang, K. Watanabe, T. Taniguchi, K. Ueno, E. Tutuc and B.J. LeRoy
Nature Physics 16 (2020)1093–1096
DOI:10.1038/s41567-020-0958-x
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127."Synthesis of AlOx thin films by atmospheric pressure mist chemical vapor deposition for surface passivation and electrical insulator layers"

A. Rajib, K. M. Enamul, S. Kurosu, T. Ukai, M. Tokuda, Y. Fujii, T. Hanajiri, R. Ishikawa, K. Ueno, and H. Shirai
J. Vac. Sci. Technol. A 38 (2020) 033413
DOI:10.1116/1.5143273

126."Ultrafast dynamics of the low frequency shear phonon in 1T'-MoTe2"

T. Fukuda, K. Makino, Y. Saito, P. Fons, A.V. Kolobov, K. Ueno, and M. Hase
Appl. Phys. Lett. 116 (2020) 093103
DOI:10.1063/1.5143485

125."Investigation of laser-induced-metal phase of MoTe2 and its contact property via scanning gate microscopy"

K. Sakanashi, H. Ouchi, K. Kamiya, P. Krüger, K. Miyamoto, T. Omatsu, K. Ueno, K. Watanabe, T. Taniguchi, J. Bird, N. Aoki
Nanotechnology 31 (2020) 205205
DOI:10.1088/1361-6528/ab71b8

124."Improved efficiency of methylammonium-free perovskite thin film solar cells by fluorinated ammonium iodide treatment"

R. Ishikawa, K. Ueno, H. Shirai
Organic Electronics 78 (2020) 105596
DOI:10.1016/j.orgel.2019.105596

123."Low-temperature growth of crystalline tungsten disulfide thin films by using organic liquid precursors"

Y. Ikeda and K. Ueno
Jpn. J. Appl. Phys. 59 (2020) SCCC04
DOI:10.7567/1347-4065/ab489a

122."Self-assembled Fluorinated Polymer Passivation Layer for Efficient Perovskite Thin-film Solar Cells"

Y. Moriya, R. Ishikawa, S. Akiyama, K. Ueno, H. Shirai
Chem. Lett. 49 (2020) 87-90
DOI:10.1246/cl.190692

121."Oxygen-sensitive layered MoTe2 channels for environmental detection"

S.-H Yang, C.-Y. Lin, Y.-M. Chang, M. Li, K.-C. Lee, C.-F. Chen, F.-S. Yang, C.-H Lien, K. Ueno, K. Watanabe, T. Taniguchi, K. Tsukagoshi, Y.-F. Lin
ACS Appl. Mater. Interfaces 11 (2019) 47047-47053
DOI:10.1021/acsami.9b15036

120."Selective oxidation of the surface layer of bilayer WSe2 by laser heating"

H. Shioya, K. Tsukagoshi, K. Ueno, and A. Oiwa
Jpn. J. Appl. Phys. 58 (2019) 120903
DOI:10.7567/1347-4065/ab50da

119."Role of the solvent in large crystal grain growth of inorganic-organic halide FA0.8Cs0.2PbIxBr3−x perovskite thin films monitored by ellipsometry

K. Kawamura, R. Ishikawa, Y. Wasai, N. Nabatova-Gabain, S. Kurosu, T. Ukai, M. Tokuda, Y. Fujii, T. Hanajiri, K. Ueno, and H. Shirai
J. Vac. Sci. & Technol. B 37 (2019) 062401
DOI:10.1116/1.5123399

118."Barrier Formation at the Contacts of Vanadium Dioxide and Transition-Metal Dichalcogenides"

M. Yamamoto, R. Nouchi, T. Kanki, S. Nakaharai, A. N. Hattori, K. Watanabe, T. Taniguchi, Y. Wakayama, K. Ueno, and H. Tanaka
ACS Appl. Mater. Interfaces 11 (2019) 36871-36879
DOI:10.1021/acsami.9b13763

117."Dimensionality reduction and band quantization induced by potassium intercalation in 1T-HfTe2

Y. Nakata, K. Sugawara, A. Chainani, K. Yamauchi, K. Nakayama, S. Souma, P.-Y. Chuang, C.-M. Cheng, T. Oguchi, K. Ueno, T. Takahashi, and T. Sato
Phys. Rev. Mater. 3 (2019) 071001(R)
DOI:10.1103/PhysRevMaterials.3.071001

116."Highly crystalline large-grained perovskite films using two additives without an antisolvent for high-efficiency solar cells"

R. Ishikawa, K. Ueno and H. Shirai
Thin Solid Films 679 (2019) 27-34
DOI:10.1016/j.tsf.2019.03.030

115."Gate-Tunable Thermal Metal-Insulator Transition in VO2 Monolithically Integrated into a WSe2 Field-Effect Transistor"

M. Yamamoto, R. Nouchi, T. Kanki, A. Hattori, K. Watanabe, T. Taniguchi, K. Ueno, H. Tanaka
ACS Appl. Mater. Interfaces 11 (2019) 3224–3230
DOI:10.1021/acsami.8b18745

114."Site-dependence of relationships between photoluminescence and applied electric field in monolayer and bilayer molybdenum disulfide"

J. Nozaki, H. Nishidome, M. Maruyama, S. Okada, S. Kusaba, K. Tanaka, K. Ueno, Y. Yomogida, and K. Yanagi
Jpn. J. Appl. Phys. 58 (2019) 015001
DOI:10.7567/1347-4065/aaead2

113."Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation"

N. Higashitarumizu, H. Kawamoto, M. Nakamura, K. Shimamura, N. Ohashi, K. Ueno and K. Nagashio
Nanoscale 10 (2018) 22474-22483
DOI:10.1039/C8NR06390G

112."2-Dimensional Tunnel FETs with a Stable Charge-Transfer-Type p+-WSe2 Source"

J. He, N. Fang, K. Nakamura, K. Ueno, T. Taniguchi, K. Watanabe, and K. Nagashio
Adv. Electron. Mater. 4 (2018) 1800207
DOI:10.1002/aelm.201800207

111."Fabrication of [CH(NH2)2]0.8Cs0.2PbI3 perovskite thin films for n-i-p planar-structure solar cells by a one-step method using 1-cyclohexyl-2-pyrrolidone as an additive"

R. Ishikawa, K. Ueno and H. Shirai
Chem. Lett. 47 (2018) 905-908
DOI:10.1246/cl.180216

110."Ultrathin Bismuth Film on 1T-TaS2: Structural Transition and Charge-Density-Wave Proximity Effect"

K. Yamada, S. Souma, K. Yamauchi, N. Shimamura, K. Sugawara, C. Trang, T. Oguchi, K. Ueno, T. Takahashi, T. Sato
Nano Lett. 18 (2018) 3235–3240
DOI:10.1021/acs.nanolett.8b01003

109."Pronounced photogating effect in atomically thin WSe2 with a self-limiting surface oxide layer"

M. Yamamoto, K. Ueno and K. Tsukagoshi
Appl. Phys. Lett. 112 (2018) 181902 (5 pages)
DOI:10.1063/1.5030525

108."Fabrication and Surface Engineering of Two-Dimensional SnS Toward Piezoelectric Nanogenerator Application"

N. Higashitarumizu, H. Kawamoto, K. Ueno and K. Nagashio
MRS Advances 3 (2018) 2809-2814
DOI:10.1557/adv.2018.404

107."Anisotropic Band Splitting in Monolayer NbSe2: Implications for Superconductivity and Charge Density Wave"

Y. Nakata, K. Sugawara, S. Ichinokura, Y. Okada, T. Hitosugi, T. Koretsune, K. Ueno, S. Hasegawa, T. Takahashi, and T. Sato
npj 2D Materials and Applications 2 (2018) 12
DOI:10.1038/s41699-018-0057-3

106."Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping"

Y.-M. Chang, S.-H. Yang, C.-Y. Lin, C.-H. Chen, C.-H. Lien, W.-B. Jian, K. Ueno, Y.-W. Suen, K. Tsukagoshi and Y.-F. Lin
Adv. Mater. 30 (2018) 1706995
DOI:10.1002/adma.201706995

105."Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2"

Y. Yamasaki, R. Moriya, M. Arai, S. Masubuchi, S. Pyon, T. Tamegai, K. Ueno and T. Machida
2D Materials 4 (2017) 041007 (10 pages)
DOI:10.1088/2053-1583/aa8a2b

104."Barium hydroxide hole blocking layer for front- and back-organic/crystalline Si heterojunction solar cells"

J. Hossain, K. Kasahara, D. Harada, A. T. M. S. Islam, R. Ishikawa, K. Ueno, T. Hanajiri, Y. Nakajima, Y. Fujii, M. Tokuda, and H. Shirai
J. Appl. Phys. 122 (2017) 055101 (8 pages)
DOI:10.1063/1.4985812

103."Sensitive Phonon-Based Probe for Structure Identification of 1T′ MoTe2"

L. Zhou, S. Huang, Y. Tatsumi, L. Wu, H. Guo, Y.-Q. Bie, K. Ueno, T. Yang, Y. Zhu, J. Kong, R. Saito, and M. Dresselhaus
J. Am. Chem. Soc. 139 (2017) 8396–8399
DOI:10.1021/jacs.7b03445

102."Fabrication of {CH(NH2)2}1-xCsxPbI3 perovskite thin films by two-step method and its application to thin film solar cells"

R. Ishikawa, K. Ueno, and H. Shirai
Chem. Lett. 46 (2017) 612-615
DOI:10.1246/cl.161194

101."Nafion-Modified PEDOT:PSS as a Transparent Hole-Transporting Layer for High-Performance Crystalline-Si/Organic Heterojunction Solar Cells with Improved Light Soaking Stability"

J. Hossain, Q. Liu, T. Miura, K. Kasahara, D. Harada, R. Ishikawa, K. Ueno, and H. Shirai
ACS Appl. Mater. Interfaces 8 (2016) 31926–31934
DOI:10.1021/acsami.6b10272

100."Role of Isopropyl Alcohol Solvent in the Synthesis of Organic–Inorganic Halide CH(NH2)2PbIxBr3–x Perovskite Thin Films by a Two-Step Method"

T. Yamanaka, K. Masumori, R. Ishikawa, K. Ueno, and H. Shirai
J. Phys. Chem. C 120 (2016) 25371–25377
DOI:10.1021/acs.jpcc.6b07527

99."Synthesis of High-Quality Large-Area Homogenous 1T′ MoTe2 from Chemical Vapor Deposition"

L. Zhou, A. Zubair, Z. Wang, X. Zhang, F. Ouyang, K. Xu, W. Fang, K. Ueno, J. Li, T. Palacios, J. Kong, and M. S. Dresselhaus
Adv. Mater. 28 (2016) 9526–9531
DOI:10.1002/adma.201602687

98."Monolayer 1T-NbSe2 as a Mott insulator"

Y. Nakata, K. Sugawara, R. Shimizu, Y. Okada, P. Han, T. Hitosugi, K. Ueno, T. Sato and T. Takahashi
NPG Asia Materials 8 (2016) e321 (5 pages)
DOI:10.1038/am.2016.157

97."Correlation between Fine Structure of Spin-Coated PEDOT:PSS and Photovoltaic Performance of Organic/Crystalline-Silicon Heterojunction Solar Cells"

S. Funada, T. Ohki, Q. Liu, J. Hossain, Y. Ishimaru, K. Ueno, and H. Shirai
J. Appl. Phys. 120 (2016) 033103 (7 pages)
DOI:10.1063/1.4958845

96.”Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi Level Pinning"

S. Nakaharai, M. Yamamoto, K. Ueno, and K. Tsukagoshi
ACS Appl. Mater. Interfaces 8 (2016) 14732–14739
DOI:10.1021/acsami.6b02036

95."Effect of substrate bias on mist deposition of conjugated polymer on textured crystalline-Si for efficient c-Si/organic heterojunction solar cells"

T. Ohki, K. Ichikawa, J. Hossain, Y. Fujii, T. Hanajiri, R. Ishikawa, K. Ueno, and H. Shirai
Phys. Status Solidi A 213 (2016) 1922–1925
DOI:10.1002/pssa.201532951

94."Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts"

M. Yamamoto, S. Nakaharai, K. Ueno, and K. Tsukagoshi
Nano Lett., 16 (2016) 2720-2727
DOI:10.1021/acs.nanolett.6b00390

93."Investigating the chemical mist deposition technique for poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) on textured crystalline-silicon for organic/crystalline-silicon heterojunction solar cells"

J. Hossain, T. Ohki, K. Ichikawa, K. Fujiyama, K. Ueno, Y. Fujii, T. Hanajiri and H. Shirai
Jpn. J. Appl. Phys. 55 (2016) 031601 (7 pages)
DOI:10.7567/JJAP.55.031601

92."Solution-processed crystalline silicon double-heterojunction solar cells"

R. Devkota, Q. Liu, T. Ohki, J. Hossain, K. Ueno, and H. Shirai
Appl. Phys. Express 9 (2016) 022301 (4 pages)
DOI:10.7567/APEX.9.022301

91.”Introduction to the Growth of Bulk Single Crystals of Two-Dimensional Transition-Metal Dichalcogenides"

K. Ueno
J. Phys. Soc. Jpn. 84 (2015) 121015 (6 pages)
DOI:10.7566/JPSJ.84.121015

90."Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide"

M. Arai, R. Moriya, N. Yabuki, S. Masubuchi, K. Ueno, and T. Machida
Appl. Phys. Lett. 107 (2015) 103107 (4 pages)
DOI:10.1063/1.4930311

89."Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2"

L. Zhou, K. Xu, A. Zubair, A. Liao, W. Fang, F. Ouyang, Y.-H. Lee, K. Ueno, R. Saito, T. Palacios, J. Kong, and M. S. Dresselhaus
J. Am. Chem. Soc. 137 (2015) 11892–11895
DOI:10.1021/jacs.5b07452

88."Changes in structure and chemical composition of α-MoTe2 and β-MoTe2 during heating in vacuum conditions"

K. Ueno and K. Fukushima
Appl. Phys. Express 8 (2015) 095201 (4 pages)
DOI:10.7567/APEX.8.095201

87."Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors"

Y.-F. Lin, Y. Xu, C.-Y. Lin, Y.-W. Suen, M. Yamamoto, S. Nakaharai, K. Ueno, and K. Tsukagoshi
Adv. Mater. 27 (2015) 6612–6619
DOI:10.1002/adma.201502677

86."Electrostatically Reversible Polarity of Ambipolar α‐MoTe2 Transistors"

S. Nakaharai, M. Yamamoto, K. Ueno, Y.-F. Lin, S.-L. Li, and K. Tsukagoshi
ACS Nano 9 (2015) 5976-5983
DOI:10.1021/acsnano.5b00736

85."Highly Efficient Solution-Processed Poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate)/Crystalline-Silicon Heterojunction Solar Cells with Improved Light-Induced Stability"

Q. Liu, R. Ishikawa, S. Funada, K. Ueno, and H. Shirai
Adv. Ener. Mater. 5 (2015) 1500744
DOI:10.1002/aenm.201500744

84."Double resonance Raman modes in mono- and few-layer MoTe2"

H. Guo, T. Yang, M. Yamamoto, L. Zhou, R. Ishikawa, K. Ueno, K. Tsukagoshi, Z. Zhang, M. Dresselhaus, and R. Saito
Phys. Rev. B 91 (2015) 205415 (8 pages)
DOI:10.1103/PhysRevB.91.205415

83."Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2"

M. Yamamoto, S. Dutta, S. Aikawa, S. Nakaharai, K. Wakabayashi, M. Fuhrer, K. Ueno, and K. Tsukagoshi
Nano Lett. 15 (2015) 2067–2073
DOI:10.1021/nl5049753

82."Efficient organic/polycrystalline silicon hybrid solar cells"

Q. Liu, T. Ohki, D. Liu, H. Sugawara, R. Ishikawa, K. Ueno, and H. Shirai
Nano Energy 11 (2015) 260–266
DOI:10.1016/j.nanoen.2014.10.032

81."Improved performance of poly(3,4-ethylenedioxythiophene):poly(stylene sulfonate)/n-Si hybrid solar cell by incorporating silver nanoparticles"

I. Khatri, Q. Liu, K. Ueno and H. Shirai
Jpn. J. Appl. Phys. 53 (2014) 110305 (4 pages)
DOI:10.7567/JJAP.53.110305

80."Self assembled silver nanowire mesh as top electrode for organic–inorganic hybrid solar cell"

I. Khatri, Q. Liu, R. Ishikawa, K. Ueno, and H. Shirai
Can. J. Phys. 92 (2014) 867–870
DOI:10.1139/cjp-2013-0564

79."Improved photovoltaic response by incorporating green tea modified multiwalled carbon nanotubes in organic–inorganic hybrid solar cell"

I. Khatri, Q. Liu, R. Ishikawa, K. Ueno, and H. Shirai
Can. J. Phys. 92 (2014) 849–852
DOI:10.1139/cjp-2013-0506

78."Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits"

Y.-F. Lin, Y. Xu, S.-T. Wang, S.-L. Li, M. Yamamoto, A. Aparecido-Ferreira, W. Li, H. Sun, S. Nakaharai, W.-B. Jian, K. Ueno, and K. Tsukagoshi
Adv. Mater. 26 (2014) 3263–3269
DOI:10.1002/adma.201305845

77."Real-time measurement of optical anisotropy during film growth using a chemical mist deposition of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)"

T. Hiate, N. Miyauchi, Q. Liu, R. Ishikawa, K. Ueno, and H. Shirai
J. Appl. Phys. 115 (2014) 123514 (6 pages)
DOI:10.1063/1.4869956

76."Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2"

M. Yamamoto, S. T. Wang, M. Ni, Y.-F. Lin, S.-L. Li, S. Aikawa, W.-B. Jian, K. Ueno, K. Wakabayashi, and K. Tsukagoshi
ACS Nano 8 (2014) 3895–3903
DOI:10.1021/nn5007607

75."Self-assembled silver nanowires as top electrode for poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate)/n-silicon solar cell"

I. Khatri, A. Hoshino, F. Watanabe, Q. Liu, R. Ishikawa, K. Ueno, H. Shirai
Thin Solid Films 558 (2014) 306–310
DOI:10.1016/j.tsf.2014.02.073

74."Improved photovoltaic performance of crystalline-Si/organic Schottky junction solar cells using ferroelectric polymers"

Q. Liu, I. Khatri, R. Ishikawa, A. Fujimori, K. Ueno, K. Manabe, H. Nishino and H. Shirai
Appl. Phys. Lett. 103 (2013) 163503 (5 pages)
DOI:10.1063/1.4826323

73."High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits"

H. S. Song, S. L. Li, L. Gao, Y. Xu, K. Ueno, J. Tang, Y. B. Cheng and K. Tsukagoshi
Nanoscale 5 (2013) 9666-9670
DOI:10.1039/C3NR01899G

72."Optical anisotropy in solvent-modified poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) and its effect on the photovoltaic performance of crystalline silicon/organic heterojunction solar cells"

Q. Liu, T. Imamura, T. Hiate, I. Khatri, Z. Tang, R. Ishikawa, K. Ueno, and H. Shirai
Appl. Phys. Lett. 102 (2013) 243902 (4 pages)
DOI:10.1063/1.4811355

71."Effects of molybdenum oxide molecular doping on the chemical structure of poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate) and on carrier collection efficiency of silicon/poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate) heterojunction solar cells"

Q. Liu, I. Khatri, R. Ishikawa, K. Ueno, and H. Shirai
Appl. Phys. Lett. 102 (2013) 183503 (4 pages)
DOI:10.1063/1.4804298

70."Green-tea modified multiwalled carbon nanotubes for efficient poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate)/n-silicon hybrid solar cell"

I. Khatri, Z. Tang, Q. Liu, R. Ishikawa, K. Ueno, and H. Shirai
Appl. Phys. Lett. 102 (2013) 063508 (5 pages)
DOI:10.1063/1.4792691

69. "Efficient Organic Photovoltaic Cells Using MoO3 Hole-Transporting Layers Prepared by Simple Spin-Cast of Its Dispersion Solution in Methanol"

M. Kishi, Y. Kubo, R. Ishikawa, H. Shirai, and K. Ueno
Jpn. J. Appl. Phys. 52 (2013) 020202 (3 pages)
URL:http://jjap.jsap.jp/link?JJAP/52/020202/
DOI:10.7567/JJAP.52.020202

68."Top-contacted Organic Field-effect Transistors with Graphene Electrodes Prepared by Laminate Transfer method"

K. Suganuma, T. Gotou, and K. Ueno
Appl. Phys. Express 5 (2012) 125104 (3 pages)
URL:http://apex.jsap.jp/link?APEX/5/125104/
DOI:10.1143/APEX.5.125104

67."Increased Organic Photovoltaic Cell Efficiency by Incorporating a Nonionic Fluorinated Surfactant Cathode Interlayer"

R. Ishikawa, H. Shirai, and K. Ueno
Appl. Phys. Express 5 (2012) 121601 (3 pages)
URL:http://apex.jsap.jp/link?APEX/5/121601/
DOI:10.1143/APEX.5.121601

66."Electrospray-Deposited Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) for Poly(3-hexylthiophene):Phenyl-C61-Butyric Acid Methyl Ester Photovoltaic Cells"

T. Hiate, T. Ino, R. Ishikawa, K. Ueno, and H. Shirai
Jpn. J. Appl. Phys. 51 (2012) 10NE30 (3 pages)
DOI:10.1143/JJAP.51.10NE30

65."Crystalline Silicon/Graphene Oxide Hybrid Junction Solar Cells"

Q. Liu, F. Wanatabe, A. Hoshino, R. Ishikawa, T. Gotou, K. Ueno, and H. Shirai
Jpn. J. Appl. Phys. 51 (2012) 10NE22 (4 pages)
DOI:10.1143/JJAP.51.10NE22

64."Chemical mist deposition of graphene oxide and PEDOT:PSS films for crystalline Si/organic heterojunction solar cells"

I. Khatri, T. Imamura, A. Uehara, R. Ishikawa, K. Ueno and H. Shirai
Phys. Stat. Solidi C 9 (2012) 2134-2137
DOI:10.1002/pssc.201200132

63."Optical properties and carrier transport in c-Si/conductive PEDOT:PSS(GO) composite heterojunctions"

Z. Tang, Q. Liu, I. Khatri, R. Ishikawa, K. Ueno and H. Shirai
Phys. Stat. Solidi C 9 (2012) 2075-2078
DOI:10.1002/pssc.201200130

62."Real-time ellipsometric characterization of the initial growth stage of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) films by electrospray deposition using N,N-dimethylformamide solvent solution"

T. Ino, T. Hiate, T. Fukuda, K. Ueno, and H. Shirai
J. Non-Crystalline Solids 358 (2012) 2520-2524
DOI:10.1016/j.jnoncrysol.2012.01.055

61."Electrospray Deposition of Poly(3-hexylthiophene) Films for Crystalline Silicon/Organic Hybrid Junction Solar Cells"

T. Ino, M. Ono, N. Miyauchi, Q. Liu, Z. Tang, R. Ishikawa, K. Ueno, and H. Shirai
Jpn. J. Appl. Phys. 51 (2012) 061602 (4 pages)
DOI:10.1143/JJAP.51.061602

60."Ionic liquid-mediated epitaxy of high-quality C60 crystallites in a vacuum"

Y. Takeyama, S. Maruyama, H. Taniguchi, M. Itoh, K. Ueno, and Y. Matsumoto
CrystEngComm. 14 (2012) 4939-4945
DOI:10.1039/C2CE25163A

59."Highly efficient crystalline silicon/Zonyl fluorosurfactant-treated organic heterojunction solar cells"

Q. Liu, M. Ono, Z. Tang, R. Ishikawa, K. Ueno, and H. Shirai
Appl. Phys. Lett. 100 (2012) 183901 (4 pages)
URL: http://apl.aip.org/resource/1/applab/v100/i18/p183901_s1
DOI:10.1063/1.4709615

58. "Efficient Crystalline Si/Poly(ethylene dioxythiophene):Poly(styrene sulfonate):Graphene Oxide Composite Heterojunction Solar Cells"

M. Ono, Z. Tang, R. Ishikawa, T. Gotou, K. Ueno, and H. Shirai
Appl. Phys. Express 5 (2012) 032301 (3 pages)
URL: http://apex.jsap.jp/link?APEX/5/032301/
DOI:10.1143/APEX.5.032301

57. "Surface Modification of Poly(3,4-ethylene dioxthiophene):Poly(styrene sulfonic acid) (PEDOT:PSS) Films by Atmospheric-Pressure Argon Plasma for Organic Thin-Film Solar Cells"

T. Ino, T. Hayashi, T. Fukuda, K. Ueno, and H. Shirai
J. Nanosci. Nanotech. 11 (2011) 8035-8039
DOI:10.1166/jnn.2011.5065

56. "Real-Time Ellipsometric Characterization of Initial Growth Stage of Poly(3,4-ethylene dioxythiophene):Poly(styrene sulfonic acid) Films by Electrospray Deposition"

T. Ino, T. Asano, T. Fukuda, K. Ueno, and H. Shirai
Jpn. J. Appl. Phys. 50 (2011) 081603 (5 pages)
DOI:10.1143/JJAP.50.081603

55. "Bulk-heterojunction organic photovoltaic cell fabricated by electrospray deposition method using mixed organic solvent"

T. Fukuda, K. Takagi, T. Asano, Z. Honda, N. Kamata, K. Ueno, H. Shirai, J. Ju, Y. Yamagata, and Y. Tajima
Phys. Status Solidi RRL 5 (2011) 229-231
DOI:10.1002/pssr.201105232

54. "Efficient Organic Photovoltaic Cells Using Hole-Transporting MoO3 Buffer Layers Converted from Solution-Processed MoS2 Films"

S. Kato, R. Ishikawa, Y. Kubo, H. Shirai, and K. Ueno
Jpn. J. Appl. Phys. 50 (2011) 071604 (5 pages)
DOI:10.1143/JJAP.50.071604

53. "Atmospheric-pressure argon plasma etching of spin-coated 3,4-polyethylenedioxythiophene:polystyrenesulfonic acid (PEDOT:PSS) films for cupper phtalocyanine (CuPc)/C60 heterojunction thin-film solar cells"

T. Ino, T. Hayshi, K. Ueno, and H. Shirai
Thin Solid Films 519 (2011) 6834-6839
DOI:10.1016/j.tsf.2011.04.042

52. "Depth profile characterization of spin-coated poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) films by spectroscopic ellipsometry"

T. Ino, T. Hayashi, T. Fukuda, K. Ueno and H. Shirai
Phys. Stat. Solidi C 8 (2011) 3025-3028
DOI:10.1002/pssc.201001218

51. "Fabrication of Transparent and Flexible Organic Field-Effect Transistors with Solution-Processed Graphene Source-Drain and Gate Electrodes"

K. Suganuma, S. Watanabe, T. Gotou and K. Ueno
Appl. Phys. Express 4 (2011) 021603 (3 pages)
DOI:10.1143/APEX.4.021603

50. "Origin of the ambipolar operation of a pentacene field-effect transistor fabricated on a poly(vinyl alcohol)-coated Ta2O5 gate dielectric with Au source/drain electrodes"

S. Takebayashi, S. Abe, K. Saiki and K. Ueno
Appl. Phys. Lett. 94 (2009) 083305 (3 pages)
Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article may be found at http://link.aip.org/link/?APL/94/083305.
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DOI:10.1063/1.3089692

49. "Step-bunched Bi-terminated Si(111) surfaces as a nanoscale orientation template for quasi single crystalline epitaxial growth of thin film phase pentacene"

T. Shimada, M. Ohtomo, T. Suzuki, T. Hasegawa, K. Ueno, S. Ikeda, K. Saiki, M. Sasaki and K. Inaba
Appl. Phys. Lett. 93 (2008) 223303 (3 pages)
DOI:10.1063/1.3040309

48. "Nucleation on the substrate surfaces during liquid flux mediated vacuum deposition of rubrene"

T. Shimada, Y. Ishii, K. Ueno, N. Yoshimoto and T. Hasegawa
J. Cryst. Growth 311 (2008) 163-166
DOI:10.1016/j.jcrysgro.2008.10.096

47. "Nano-transfer of the polythiophene molecular alignment onto the step-bunched vicinal Si(111) substrate"

R. Onoki, G. Yoshikawa, Y. Tsuruma, S. Ikeda, K. Saiki and K. Ueno
Langmuir 24 (2008) 11605-11610
DOI:10.1021/la8016722

46. "Layer-by-layer growth of C60 thin films by continuous-wave infrared laser deposition"

S. Yaginuma, K. Itaka, M. Haemori, M. Katayama, K. Ueno, T. Ohnishi, M. Lippmaa, Y. Matsumoto and H. Koinuma
Appl. Phys. Express 1 (2008) 015005
DOI:10.1143/APEX.1.015005

45. "Effect of Organic Buffer Layer on Performance of Pentacene Field-Effect Transistor Fabricated on Natural Mica Gate Dielectric"

A. Matsumoto, R. Onoki, S. Ikeda, K. Saiki and K. Ueno
Jpn. J. Appl. Phys. 46 (2007) L913-L916
DOI:10.1143/JJAP.46.L913

44."Anisotropic Polymerization of a Long-chain Diacetylene Derivative Langmuir-Blodgett Film on a Step-bunched SiO2/Si Surface"

R. Onoki, K. Ueno, H. Nakahara, G. Yoshikawa, S. Ikeda, S. Entani, T. Miyadera, I. Nakai, H. Kondoh, T. Ohta, M. Kiguchi and K. Saiki
Langmuir 22 (2006) 5742-5747
DOI:10.1021/la060482d

43. "Structure of Organic Thin Films Grown on Surface-modified Tantalum Oxide"

R. Onoki, S. Abe, K. Ueno, H. Nakahara and K. Saiki
Chem. Lett. 35 (2006) 746-747
DOI:10.1246/cl.2006.746

42. "In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates"

G. Yoshikawa, T. Miyader, R. Onoki, K. Ueno, I. Nakai, S. Entani, S. Ikeda, D. Guo, M. Kiguchi, H. Kondoh,T. Ohta and K. Saiki
Surf. Sci. 600 (2006) 2518-2522
DOI:10.1016/j.susc.2006.04.012

41. "Fabrication of an organic field-effect transistor on a mica gate dielectric"

A. Matsumoto, R. Onoki, K. Ueno, S. Ikeda and K. Saiki
Chem. Lett. 35 (2006) 354-355
DOI:10.1246/cl.2006.354

40. "Anodization of electrolytically polished Ta surfaces for enhancement of carrier injection into organic field effect transistors"

K. Ueno, S. Abe, R. Onoki and K. Saiki
J. Appl. Phys. 98 (2005) 114503 (5 pages)
DOI:10.1063/1.2138807

39. "Bulk-like pentacene epitaxial films on hydrogen-terminated Si(111)"

T. Shimada, H. Nogawa, T. Hasegawa, R. Okada, H. Ichikawa, K. Ueno and K. Saiki
Appl. Phys. Lett. 87 (2005) 061917
DOI:10.1063/1.2008371

38. "Morphological change of C60 monolayer epitaxial films under photoexcitation"

Y. Yamamoto, H. Ichikawa, K. Ueno, A. Koma, K. Saiki, T. Shimada
Phys. Rev. B 70 (2004) 155415
DOI:10.1103/PhysRevB.70.155415

37. "Methyl-terminated Si(111) surface as the ultra thin protection layer to fabricate position-controlled alkyl SAMs by using atomic force microscope anodic oxidation"

R. Okada, T. Miyadera, T. Shimada, A. Koma, K. Ueno and K. Saiki
Surf. Sci. 552 (2004) 46-52
DOI:10.1016/j.susc.2004.01.026

36. "Scanning Tunneling Microscopy and Spectroscopy Study of LiBr/Si(001) Heterostructure"

M. Katayama, K. Ueno, A. Koma, M. Kiguchi and K. Saiki
Jpn. J. Appl. Phys. 43 (2004) L203-L205
DOI:10.1143/JJAP.43.L203

35. "Accumulation and Depletion Layer Thicknesses in Organic Field Effect Transistors"

M. Kiguchi, M. Nakayama, K. Fujiwara, K. Ueno, T. Shimada and K. Saiki
Jpn. J. Appl. Phys. 42 (2003) L1408-L1410
DOI:10.1143/JJAP.42.L1408

34. "Visible light photoemission and negative electron affinity of single-crystalline CsCl thin films"

G. Yoshikawa, M. Kiguchi, K. Ueno, A. Koma and K. Saiki
Surf.Sci. 544 (2003) 220-226
DOI:10.1016/j.susc.2003.08.016

33. "Nanoscale anodic oxidation on a Si(111) surface terminated by bilayer-GaSe"

K. Ueno, R. Okada, K. Saiki and A. Koma
Surf. Sci. 514 (2002) 27-32
DOI:10.1016/S0039-6028(02)01603-5

32. "Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(001) substrate"

K. Ueno, S. Tokuchi, K. Saiki and A. Koma
J. Cryst. Growth 237-239 (2002) 1610-1614
DOI:10.1016/S0022-0248(01)02353-3

31. "Highly-stable passivation of a Si(111) surface using bilayer-GaSe"

K. Ueno, H. Shirota, T. Kawamura, T. Shimada, K. Saiki and A. Koma
Appl. Surf. Sci. 190 (2002) 485-490
DOI:10.1016/S0169-4332(01)00923-0

30. "Epitaxial growth and electronic structure of a C60 derivative prepared by using a solution spray technique"

T. Shimada, H. Nakatani, K. Ueno, A. Koma, Y. Kuninobu, M. Sawamura and E. Nakamura
J. Appl. Phys. 90 (2001) 209-212
DOI:10.1063/1.1379052

29. "Fabrication of GaAs Quantum Dots on a Bilayer-GaSe Terminated Si(111) Substrate"

K. Ueno, K. Saiki and A. Koma
Jpn. J. Appl. Phys. 40 (2001) 1888-1891
DOI:10.1143/JJAP.40.1888

28. "Electron-Energy-Loss Spectroscopy of KxC60 and K-halides: Comparison in the K3p Excitation Region"

K. Ueno, Y. Uchino, K. Iizumi, K. Saiki and A. Koma
Appl. Surf. Sci. 169-170 (2001) 184-187
DOI:10.1016/S0169-4332(00)00729-7

27. "Electron Energy Loss Spectroscopy of C60 Monolayer Films on Active and Inactive Surfaces"

K. Iizumi, K. Ueno, K. Saiki and A. Koma
Appl. Surf. Sci. 169-170 (2001) 142-146
DOI:10.1016/S0169-4332(00)00740-6

26. "Investigation of the Growth Mechanism of an InSe Epitaxial Layer on a MoS2 Substrate"

T. Hayashi, K. Ueno, K. Saiki and A. Koma
J. Cryst. Growth 219 (2000) 115-122
DOI:10.1016/S0022-0248(00)00627-8

25. "Investigation of epitaxial arrangement and electronic structure of a La@C82 film grown on a MoS2 surface"

K. Iizumi, Y. Uchino, K. Ueno, A. Koma, K. Saiki, Y. Inada, K. Nagai, Y. Iwasa and T. Mitani
Phys. Rev. B 62 (2000) 8281-8285
DOI:10.1103/PhysRevB.62.8281

24. "Highly sensitive RHEED measurement by use of micro-channel imaging plate"