Publication

Last-modified: 2022-04-01 (Fri) 12:49:58 (549d)

1. "Low-energy electron energy loss spectroscopy on YBa2Cu3O7-y"
   • A. Ando, K. Saiki, K. Ueno and A. Koma
   • Jpn. J. Appl. Phys. 27 (1988) L304-307
   • DOI:10.1143/JJAP.27.L304
2. "Characteristic secondary electron emission from graphite and glassy carbon surfaces"
   • K. Ueno, T. Kumihashi, K. Saiki and A. Koma
   • Jpn. J. Appl. Phys. 27 (1988) L759-761
   • DOI:10.1143/JJAP.27.L759
3. "Application of Van der Waals Epitaxy to Highly Hterogeneous Systems"
   • K. Saiki, K. Ueno, T. Shimada and A. Koma
   • J. Cryst. Growth 95 (1989) 603-606
   • DOI:10.1016/0022-0248(89)90475-2
4. "Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur-terminated GaAs (111) surfaces"
   • K. Ueno, T. Shimada, K. Saiki and A. Koma
   • Appl. Phys. Lett. 56 (1990) 327-329
   • DOI:10.1063/1.102817
5. "Epitaxial growth of transition metal dichalcogenides on cleaved faces of mica"
   • K. Ueno, K. Saiki, T. Shimada and A. Koma
   • J. Vac. Sci. Technol. A 8 (1990) 68-72
   • DOI:10.1116/1.576983
6. "Van der Waals epitaxial growth and characterization of MoSe2 thin films on SnS2"
   • F. S. Ohuchi, B. A. Parkinson, K. Ueno and A. Koma
   • J. Appl. Phys. 68 (1990) 2168-2175
   • DOI:10.1063/1.346574
7. "Periodic lattice distortions as a result of lattice mismatch in epitaxial films of two-dimensional materials"
   • B. A. Parkinson, F. S. Ohuchi, K. Ueno and A. Koma
   • Appl. Phys. Lett. 58 (1991) 472-474
   • DOI:10.1063/1.104611
8. "Heteroepitaxial growth by Van der Waals interaction in one-, two- and three-dimensional materials"
   • A. Koma, K. Ueno and K. Saiki
   • J. Cryst. Growth 111 (1991) 1029-1032
   • DOI:10.1016/0022-0248(91)91126-U
9. "Growth of MoSe2 thin films with Van der Waals epitaxy"
   • F. S. Ohuchi, T. Shimada, B. A. Parkinson, K. Ueno and A. Koma
   • J. Cryst. Growth 111 (1991) 1033-1037
   • DOI:10.1016/0022-0248(91)91127-V
10. "Heteroepitaxy of layered semiconductor GaSe on a GaAs(111)B surface"
    • K. Ueno, H. Abe, K. Saiki and A. Koma
    • Jpn. J. Appl. Phys. 30 (1991) L1352-1354
    • DOI:10.1143/JJAP.30.L1352
11. "Hetero-epitaxy of layered compound semiconductor GaSe onto GaAs surfaces for very effective passivation of nanometer structures"
    • K. Ueno, H. Abe, K. Saiki, A. Koma, H. Oigawa and Y. Nannichi
    • Surf. Sci. 267 (1992) 43-46
    • DOI:10.1016/0039-6028(92)91084-O
12. "Heteroepitaxial growth of layered semiconductor GaSe on a hydrogen-terminated Si(111) surface"
    • K. Y. Liu, K. Ueno, Y. Fujikawa, K. Saiki and A. Koma
    • Jpn. J. Appl. Phys. 32 (1993) L434-437
    • DOI:10.1143/JJAP.32.L434
13. "Heteroepitaxial growth of layered GaSe films on GaAs(001) surfaces"
    • H. Abe, K. Ueno, K. Saiki and A. Koma
    • Jpn. J. Appl. Phys. 32 (1993) L1444-1447
    • DOI:10.1143/JJAP.32.L1444
14. "Scanning tunneling microscope observation of the metal-adsorbed layered semiconductor surfaces"
    • H. Abe, K. Kataoka, K. Ueno and A. Koma
    • Jpn. J. Appl. Phys. 34 (1995) 3342-3345
    • DOI:10.1143/JJAP.34.3342
15. "Van der Waals epitaxy on hydrogen-terminated Si(111) surfaces and investigation of its growth mechanism by atomic force microscope"
    • K. Ueno, M. Sakurai and A. Koma
    • J. Cryst. Growth 150 (1995) 1180-1185
    • DOI:10.1016/0022-0248(95)80125-V
16. "Preparation of GaS thin films by molecular beam epitaxy"
    • H. Yamada, K. Ueno and A. Koma
    • Jpn. J. Appl. Phys. 35 (1996) L568-570
    • DOI:10.1143/JJAP.35.L568
17. "Nanostructure fabrication by selective growth of molecular crystals on layered material substrates"
    • K. Ueno, K. Sasaki, N. Takeda, K. Saiki and A. Koma
    • Appl. Phys. Lett. 70 (1997) 1104-1106
    • DOI:10.1063/1.118498
18. "Investigation of the growth mechanism of layered semiconductor GaSe"
    • K. Ueno, N. Takeda, K. Sasaki and A. Koma
    • Appl. Surf. Sci. 113-114 (1997) 38-42
    • DOI:10.1016/S0169-4332(96)00837-9
19. "Nanostructure fabrication using selective growth on nanosize patterns drawn by a scanning probe microscope"
    • K. Sasaki, K. Ueno and A. Koma
    • Jpn. J. Appl. Phys. 36 (1997) 4061-4064
    • DOI:10.1143/JJAP.36.4061
20. "Van der Weals type buffer layers: epitaxial growth of the large lattice mismatch system CdS/InSe/H-Si(111)"
    • T. Loeher, K. Ueno and A. Koma
    • Appl. Surf. Sci. 130-132 (1998) 334-339
    • DOI:10.1016/S0169-4332(98)00080-4
21. "Fabrication of C60 Nanostructures by Selective Growth on GaSe/MoS2 and InSe/MoS2 Heterostructure Substrates"
    • K. Ueno, K. Sasaki, T. Nakahara and A. Koma
    • Appl. Surf. Sci. 130-132 (1998) 670-675
    • DOI:10.1016/S0169-4332(98)00136-6
22. "A Novel Method to Fabricate a Molecular Quantum Structure: Selective Growth of C60 on Layered Material Heterostructures"
    • K. Ueno, K. Sasaki, K. Saiki and A. Koma
    • Jpn. J. Appl. Phys. 38 (1999) 511-514
    • DOI:10.1143/JJAP.38.511
23. "Growth and Characterization of Ga2Se3/GaAs(100) Epitaxial Thin Films"
    • K. Ueno, M. Kawayama, Z. R. Dai, A. Koma and F. S. Ohuchi
    • J. Cryst. Growth 207 (1999) 69-76
    • DOI:10.1016/S0022-0248(99)00359-0: http://dx.doi.org/10.1016/S0022-0248(99)00359-0
24. "Highly sensitive RHEED measurement by use of micro-channel imaging plate"
    • K. Saiki, T. Kono, K. Ueno and A. Koma
    • Rev. Sci. Instrum. 71 (2000) 3478-3479
    • DOI:10.1063/1.1287625
25. "Investigation of epitaxial arrangement and electronic structure of a La@C82 film grown on a MoS2 surface"
    • K. Iizumi, Y. Uchino, K. Ueno, A. Koma, K. Saiki, Y. Inada, K. Nagai, Y. Iwasa and T. Mitani
    • Phys. Rev. B 62 (2000) 8281-8285
    • DOI:10.1103/PhysRevB.62.8281
26. "Investigation of the Growth Mechanism of an InSe Epitaxial Layer on a MoS2 Substrate"
    • T. Hayashi, K. Ueno, K. Saiki and A. Koma
    • J. Cryst. Growth 219 (2000) 115-122
    • DOI:10.1016/S0022-0248(00)00627-8
27. "Electron Energy Loss Spectroscopy of C60 Monolayer Films on Active and Inactive Surfaces"
    • K. Iizumi, K. Ueno, K. Saiki and A. Koma
    • Appl. Surf. Sci. 169-170 (2001) 142-146
    • DOI:10.1016/S0169-4332(00)00740-6
28. "Electron-Energy-Loss Spectroscopy of KxC60 and K-halides: Comparison in the K3p Excitation Region"
    • K. Ueno, Y. Uchino, K. Iizumi, K. Saiki and A. Koma
    • Appl. Surf. Sci. 169-170 (2001) 184-187
    • DOI:10.1016/S0169-4332(00)00729-7
29. "Fabrication of GaAs Quantum Dots on a Bilayer-GaSe Terminated Si(111) Substrate"
    • K. Ueno, K. Saiki and A. Koma
    • Jpn. J. Appl. Phys. 40 (2001) 1888-1891
    • DOI:10.1143/JJAP.40.1888
30. "Epitaxial growth and electronic structure of a C60 derivative prepared by using a solution spray technique"
    • T. Shimada, H. Nakatani, K. Ueno, A. Koma, Y. Kuninobu, M. Sawamura and E. Nakamura
    • J. Appl. Phys. 90 (2001) 209-212
    • DOI:10.1063/1.1379052
31. "Highly-stable passivation of a Si(111) surface using bilayer-GaSe"
    • K. Ueno, H. Shirota, T. Kawamura, T. Shimada, K. Saiki and A. Koma
    • Appl. Surf. Sci. 190 (2002) 485-490
    • DOI:10.1016/S0169-4332(01)00923-0
32. "Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(001) substrate"
    • K. Ueno, S. Tokuchi, K. Saiki and A. Koma
    • J. Cryst. Growth. 237-239 (2002) 1610-1614.
    • DOI:10.1016/S0022-0248(01)02353-3
33. "Nanoscale anodic oxidation on a Si(111) surface terminated by bilayer-GaSe"
    • K. Ueno, R. Okada, K. Saiki and A. Koma
    • Surf. Sci. 514 (2002) 27-32
    • DOI:10.1016/S0039-6028(02)01603-5
34. "Visible light photoemission and negative electron affinity of single-crystalline CsCl thin films"
    • G. Yoshikawa, M. Kiguchi, K. Ueno, A. Koma and K. Saiki
    • Surf.Sci. 544 (2003) 220-226
    • DOI:10.1016/j.susc.2003.08.016
35. "Accumulation and Depletion Layer Thicknesses in Organic Field Effect Transistors"
    • M. Kiguchi, M. Nakayama, K. Fujiwara, K. Ueno, T. Shimada and K. Saiki
    • Jpn. J. Appl. Phys. 42 (2003) L1408-L1410
    • DOI:10.1143/JJAP.42.L1408
36. "Scanning Tunneling Microscopy and Spectroscopy Study of LiBr/Si(001) Heterostructure"
    • M. Katayama, K. Ueno, A. Koma, M. Kiguchi and K. Saiki
    • Jpn. J. Appl. Phys. 43 (2004) L203-L205
    • DOI:10.1143/JJAP.43.L203
37. "Methyl-terminated Si(111) surface as the ultra thin protection layer to fabricate position-controlled alkyl SAMs by using atomic force microscope anodic oxidation"
    • R. Okada, T. Miyadera, T. Shimada, A. Koma, K. Ueno and K. Saiki
    • Surf. Sci. 552 (2004) 46-52
    • DOI:10.1016/j.susc.2004.01.026
38. "Morphological change of C60 monolayer epitaxial films under photoexcitation"
    • Y. Yamamoto, H. Ichikawa, K. Ueno, A. Koma, K. Saiki, T. Shimada
    • Phys. Rev. B 70 (2004) 155415
    • DOI:10.1103/PhysRevB.70.155415
39. "Bulk-like pentacene epitaxial films on hydrogen-terminated Si(111)"
    • T. Shimada, H. Nogawa, T. Hasegawa, R. Okada, H. Ichikawa, K. Ueno and K. Saiki
    • Appl. Phys. Lett. 87 (2005) 061917
    • DOI:10.1063/1.2008371
40. "Anodization of electrolytically polished Ta surfaces for enhancement of carrier injection into organic field effect transistors"
    • K. Ueno, S. Abe, R. Onoki and K. Saiki
    • J. Appl. Phys. 98 (2005) 114503 (5 pages)
    • DOI:10.1063/1.2138807
41. "Fabrication of an organic field-effect transistor on a mica gate dielectric"
    • A. Matsumoto, R. Onoki, K. Ueno, S. Ikeda and K. Saiki
    • Chem. Lett. 35 (2006) 354-355
    • DOI:10.1246/cl.2006.354
42. "In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates"
    • G. Yoshikawa, T. Miyader, R. Onoki, K. Ueno, I. Nakai, S. Entani, S. Ikeda, D. Guo, M. Kiguchi, H. Kondoh,T. Ohta and K. Saiki
    • Surf. Sci. 600 (2006) 2518-2522
    • DOI:10.1016/j.susc.2006.04.012
43. "Structure of Organic Thin Films Grown on Surface-modified Tantalum Oxide"
    • R. Onoki, S. Abe, K. Ueno, H. Nakahara and K. Saiki
    • Chem. Lett. 35 (2006) 746-747
    • DOI:10.1246/cl.2006.746
44. "Anisotropic Polymerization of a Long-chain Diacetylene Derivative Langmuir-Blodgett Film on a Step-bunched SiO2/Si Surface"
    • R. Onoki, K. Ueno, H. Nakahara, G. Yoshikawa, S. Ikeda, S. Entani, T. Miyadera, I. Nakai, H. Kondoh, T. Ohta, M. Kiguchi and K. Saiki
    • Langmuir 22 (2006) 5742-5747
    • DOI:10.1021/la060482d
45. "Effect of Organic Buffer Layer on Performance of Pentacene Field-Effect Transistor Fabricated on Natural Mica Gate Dielectric"
    • A. Matsumoto, R. Onoki, S. Ikeda, K. Saiki and K. Ueno
    • Jpn. J. Appl. Phys. 46 (2007) L913-L916
    • DOI:10.1143/JJAP.46.L913
46. "Layer-by-layer growth of C60 thin films by continuous-wave infrared laser deposition"
    • S. Yaginuma, K. Itaka, M. Haemori, M. Katayama, K. Ueno, T. Ohnishi, M. Lippmaa, Y. Matsumoto and H. Koinuma
    • Appl. Phys. Express 1 (2008) 015005
    • DOI:10.1143/APEX.1.015005
47. "Nano-transfer of the polythiophene molecular alignment onto the step-bunched vicinal Si(111) substrate"
    • R. Onoki, G. Yoshikawa, Y. Tsuruma, S. Ikeda, K. Saiki and K. Ueno
    • Langmuir 24 (2008) 11605-11610
    • DOI:10.1021/la8016722
48. "Nucleation on the substrate surfaces during liquid flux mediated vacuum deposition of rubrene"
    • T. Shimada, Y. Ishii, K. Ueno, N. Yoshimoto and T. Hasegawa
    • J. Cryst. Growth 311 (2008) 163-166
    • DOI:10.1016/j.jcrysgro.2008.10.096
49. "Step-bunched Bi-terminated Si(111) surfaces as a nanoscale orientation template for quasi single crystalline epitaxial growth of thin film phase pentacene"
    • T. Shimada, M. Ohtomo, T. Suzuki, T. Hasegawa, K. Ueno, S. Ikeda, K. Saiki, M. Sasaki and K. Inaba
    • Appl. Phys. Lett. 93 (2008) 223303 (3 pages)
    • DOI:10.1063/1.3040309
50. "Origin of the ambipolar operation of a pentacene field-effect transistor fabricated on a poly(vinyl alcohol)-coated Ta2O5 gate dielectric with Au source/drain electrodes"
    • S. Takebayashi, S. Abe, K. Saiki and K. Ueno
    • Appl. Phys. Lett. 94 (2009) 083305 (3 pages)
    • Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article may be found at http://link.aip.org/link/?APL/94/083305.
    • pdfファイルのダウンロードはこちら
    • DOI:10.1063/1.3089692
51. "Fabrication of Transparent and Flexible Organic Field-Effect Transistors with Solution-Processed Graphene Source-Drain and Gate Electrodes"
    • K. Suganuma, S. Watanabe, T. Gotou and K. Ueno
    • Appl. Phys. Express 4 (2011) 021603 (3 pages)
    • DOI:10.1143/APEX.4.021603
52. "Depth profile characterization of spin-coated poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) films by spectroscopic ellipsometry"
    • T. Ino, T. Hayashi, T. Fukuda, K. Ueno and H. Shirai
    • Phys. Stat. Solidi C 8 (2011) 3025-3028
    • DOI:10.1002/pssc.201001218
53. "Atmospheric-pressure argon plasma etching of spin-coated 3,4-polyethylenedioxythiophene:polystyrenesulfonic acid (PEDOT:PSS) films for cupper phtalocyanine (CuPc)/C60 heterojunction thin-film solar cells"
    • T. Ino, T. Hayshi, K. Ueno, and H. Shirai
    • Thin Solid Films 519 (2011) 6834-6839
    • DOI:10.1016/j.tsf.2011.04.042
54. "Efficient Organic Photovoltaic Cells Using Hole-Transporting MoO3 Buffer Layers Converted from Solution-Processed MoS2 Films"
    • S. Kato, R. Ishikawa, Y. Kubo, H. Shirai, and K. Ueno
    • Jpn. J. Appl. Phys. 50 (2011) 071604 (5 pages)
    • DOI:10.1143/JJAP.50.071604
55. "Bulk-heterojunction organic photovoltaic cell fabricated by electrospray deposition method using mixed organic solvent"
    • T. Fukuda, K. Takagi, T. Asano, Z. Honda, N. Kamata, K. Ueno, H. Shirai, J. Ju, Y. Yamagata, and Y. Tajima
    • Phys. Status Solidi RRL 5 (2011) 229-231
    • DOI:10.1002/pssr.201105232
56. "Real-Time Ellipsometric Characterization of Initial Growth Stage of Poly(3,4-ethylene dioxythiophene):Poly(styrene sulfonic acid) Films by Electrospray Deposition"
    • T. Ino, T. Asano, T. Fukuda, K. Ueno, and H. Shirai
    • Jpn. J. Appl. Phys. 50 (2011) 081603 (5 pages)
    • DOI:10.1143/JJAP.50.081603
57. "Surface Modification of Poly(3,4-ethylene dioxthiophene):Poly(styrene sulfonic acid) (PEDOT:PSS) Films by Atmospheric-Pressure Argon Plasma for Organic Thin-Film Solar Cells"
    • T. Ino, T. Hayashi, T. Fukuda, K. Ueno, and H. Shirai
    • J. Nanosci. Nanotech. 11 (2011) 8035-8039
    • DOI:10.1166/jnn.2011.5065
58. "Efficient Crystalline Si/Poly(ethylene dioxythiophene):Poly(styrene sulfonate):Graphene Oxide Composite Heterojunction Solar Cells"
    • M. Ono, Z. Tang, R. Ishikawa, T. Gotou, K. Ueno, and H. Shirai
    • Appl. Phys. Express 5 (2012) 032301 (3 pages)
    • URL: http://apex.jsap.jp/link?APEX/5/032301/
    • DOI:10.1143/APEX.5.032301
59. "Highly efficient crystalline silicon/Zonyl fluorosurfactant-treated organic heterojunction solar cells"
    • Q. Liu, M. Ono, Z. Tang, R. Ishikawa, K. Ueno, and H. Shirai
    • Appl. Phys. Lett. 100 (2012) 183901 (4 pages)
    • URL: http://apl.aip.org/resource/1/applab/v100/i18/p183901_s1
    • DOI:10.1063/1.4709615
60. "Ionic liquid-mediated epitaxy of high-quality C60 crystallites in a vacuum"
    • Y. Takeyama, S. Maruyama, H. Taniguchi, M. Itoh, K. Ueno, and Y. Matsumoto
    • CrystEngComm. 14 (2012) 4939-4945
    • DOI:10.1039/C2CE25163A
61. "Electrospray Deposition of Poly(3-hexylthiophene) Films for Crystalline Silicon/Organic Hybrid Junction Solar Cells"
    • T. Ino, M. Ono, N. Miyauchi, Q. Liu, Z. Tang, R. Ishikawa, K. Ueno, and H. Shirai
    • Jpn. J. Appl. Phys. 51 (2012) 061602 (4 pages)
    • DOI:10.1143/JJAP.51.061602
62. "Real-time ellipsometric characterization of the initial growth stage of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) films by electrospray deposition using N,N-dimethylformamide solvent solution"
    • T. Ino, T. Hiate, T. Fukuda, K. Ueno, and H. Shirai
    • J. Non-Crystalline Solids 358 (2012) 2520-2524
    • DOI:10.1016/j.jnoncrysol.2012.01.055
63. "Optical properties and carrier transport in c-Si/conductive PEDOT:PSS(GO) composite heterojunctions"
    • Z. Tang, Q. Liu, I. Khatri, R. Ishikawa, K. Ueno and H. Shirai
    • Phys. Stat. Solidi C 9 (2012) 2075-2078
    • DOI:10.1002/pssc.201200130
64. "Chemical mist deposition of graphene oxide and PEDOT:PSS films for crystalline Si/organic heterojunction solar cells"
    • I. Khatri, T. Imamura, A. Uehara, R. Ishikawa, K. Ueno and H. Shirai
    • Phys. Stat. Solidi C 9 (2012) 2134-2137
    • DOI:10.1002/pssc.201200132
65. "Crystalline Silicon/Graphene Oxide Hybrid Junction Solar Cells"
    • Q. Liu, F. Wanatabe, A. Hoshino, R. Ishikawa, T. Gotou, K. Ueno, and H. Shirai
    • Jpn. J. Appl. Phys. 51 (2012) 10NE22 (4 pages)
    • DOI:10.1143/JJAP.51.10NE22
66. "Electrospray-Deposited Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) for Poly(3-hexylthiophene):Phenyl-C61-Butyric Acid Methyl Ester Photovoltaic Cells"
    • T. Hiate, T. Ino, R. Ishikawa, K. Ueno, and H. Shirai
    • Jpn. J. Appl. Phys. 51 (2012) 10NE30 (3 pages)
    • DOI:10.1143/JJAP.51.10NE30
67. "Increased Organic Photovoltaic Cell Efficiency by Incorporating a Nonionic Fluorinated Surfactant Cathode Interlayer"
    • R. Ishikawa, H. Shirai, and K. Ueno
    • Appl. Phys. Express 5 (2012) 121601 (3 pages)
    • URL:http://apex.jsap.jp/link?APEX/5/121601/
    • DOI:10.1143/APEX.5.121601
68. "Top-contacted Organic Field-effect Transistors with Graphene Electrodes Prepared by Laminate Transfer method"
    • K. Suganuma, T. Gotou, and K. Ueno
    • Appl. Phys. Express 5 (2012) 125104 (3 pages)
    • URL:http://apex.jsap.jp/link?APEX/5/125104/
    • DOI:10.1143/APEX.5.125104
69. "Efficient Organic Photovoltaic Cells Using MoO3 Hole-Transporting Layers Prepared by Simple Spin-Cast of Its Dispersion Solution in Methanol"
    • M. Kishi, Y. Kubo, R. Ishikawa, H. Shirai, and K. Ueno
    • Jpn. J. Appl. Phys. 52 (2013) 020202 (3 pages)
    • URL:http://jjap.jsap.jp/link?JJAP/52/020202/
    • DOI:10.7567/JJAP.52.020202
70. "Green-tea modified multiwalled carbon nanotubes for efficient poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate)/n-silicon hybrid solar cell"
    • I. Khatri, Z. Tang, Q. Liu, R. Ishikawa, K. Ueno, and H. Shirai
    • Appl. Phys. Lett. 102 (2013) 063508 (5 pages)
    • DOI:10.1063/1.4792691
71. "Effects of molybdenum oxide molecular doping on the chemical structure of poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate) and on carrier collection efficiency of silicon/poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate) heterojunction solar cells"
    • Q. Liu, I. Khatri, R. Ishikawa, K. Ueno, and H. Shirai
    • Appl. Phys. Lett. 102 (2013) 183503 (4 pages)
    • DOI:10.1063/1.4804298
72. "Optical anisotropy in solvent-modified poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) and its effect on the photovoltaic performance of crystalline silicon/organic heterojunction solar cells"
    • Q. Liu, T. Imamura, T. Hiate, I. Khatri, Z. Tang, R. Ishikawa, K. Ueno, and H. Shirai
    • Appl. Phys. Lett. 102 (2013) 243902 (4 pages)
    • DOI:10.1063/1.4811355
73. "High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits"
    • H. S. Song, S. L. Li, L. Gao, Y. Xu, K. Ueno, J. Tang, Y. B. Cheng and K. Tsukagoshi
    • Nanoscale 5 (2013) 9666-9670
    • DOI:10.1039/C3NR01899G
74. "Improved photovoltaic performance of crystalline-Si/organic Schottky junction solar cells using ferroelectric polymers"
    • Q. Liu, I. Khatri, R. Ishikawa, A. Fujimori, K. Ueno, K. Manabe, H. Nishino and H. Shirai
    • Appl. Phys. Lett. 103 (2013) 163503 (5 pages)
    • DOI:10.1063/1.4826323
75. "Self-assembled silver nanowires as top electrode for poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate)/n-silicon solar cell"
    • I. Khatri, A. Hoshino, F. Watanabe, Q. Liu, R. Ishikawa, K. Ueno, H. Shirai
    • Thin Solid Films 558 (2014) 306–310
    • DOI:10.1016/j.tsf.2014.02.073
76. "Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2
    • M. Yamamoto, S. T. Wang, M. Ni, Y.-F. Lin, S.-L. Li, S. Aikawa, W.-B. Jian, K. Ueno, K. Wakabayashi, and K. Tsukagoshi
    • ACS Nano 8 (2014) 3895–3903
    • DOI:10.1021/nn5007607
77. "Real-time measurement of optical anisotropy during film growth using a chemical mist deposition of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)"
    • T. Hiate, N. Miyauchi, Q. Liu, R. Ishikawa, K. Ueno, and H. Shirai
    • J. Appl. Phys. 115 (2014) 123514 (6 pages)
    • DOI:10.1063/1.4869956
78. "Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits"
    • Y.-F. Lin, Y. Xu, S.-T. Wang, S.-L. Li, M. Yamamoto, A. Aparecido-Ferreira, W. Li, H. Sun, S. Nakaharai, W.-B. Jian, K. Ueno, and K. Tsukagoshi
    • Adv. Mater. 26 (2014) 3263–3269
    • DOI:10.1002/adma.201305845
79. "Improved photovoltaic response by incorporating green tea modified multiwalled carbon nanotubes in organic–inorganic hybrid solar cell"
    • I. Khatri, Q. Liu, R. Ishikawa, K. Ueno, and H. Shirai
    • Can. J. Phys. 92 (2014) 849–852
    • DOI:10.1139/cjp-2013-0506
80. "Self assembled silver nanowire mesh as top electrode for organic–inorganic hybrid solar cell"
    • I. Khatri, Q. Liu, R. Ishikawa, K. Ueno, and H. Shirai
      
    • Can. J. Phys. 92 (2014) 867–870
    • DOI:10.1139/cjp-2013-0564
81. "Improved performance of poly(3,4-ethylenedioxythiophene):poly(stylene sulfonate)/n-Si hybrid solar cell by incorporating silver nanoparticles"
    • I. Khatri, Q. Liu, K. Ueno and H. Shirai
    • Jpn. J. Appl. Phys. 53 (2014) 110305 (4 pages)
    • DOI:10.7567/JJAP.53.110305
82. "Efficient organic/polycrystalline silicon hybrid solar cells"
    • Q. Liu, T. Ohki, D. Liu, H. Sugawara, R. Ishikawa, K. Ueno, and H. Shirai
    • Nano Energy 11 (2015) 260–266
    • DOI:10.1016/j.nanoen.2014.10.032
83. "Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2"
    • M. Yamamoto, S. Dutta, S. Aikawa, S. Nakaharai, K. Wakabayashi, M. Fuhrer, K. Ueno, and K. Tsukagoshi
    • Nano Lett. 15 (2015) 2067–2073
    • DOI:10.1021/nl5049753
84. "Double resonance Raman modes in mono- and few-layer MoTe2"
    • H. Guo, T. Yang, M. Yamamoto, L. Zhou, R. Ishikawa, K. Ueno, K. Tsukagoshi, Z. Zhang, M. Dresselhaus, and R. Saito
    • Phys. Rev. B 91 (2015) 205415 (8 pages)
    • DOI:10.1103/PhysRevB.91.205415
85. "Highly Efficient Solution-Processed Poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate)/Crystalline-Silicon Heterojunction Solar Cells with Improved Light-Induced Stability"
    • Q. Liu, R. Ishikawa, S. Funada, K. Ueno, and H. Shirai
    • Adv. Ener. Mater. 5 (2015) 1500744
    • DOI:10.1002/aenm.201500744
86. "Electrostatically Reversible Polarity of Ambipolar α‐MoTe2 Transistors"
    • S. Nakaharai, M. Yamamoto, K. Ueno, Y.-F. Lin, S.-L. Li, and K. Tsukagoshi
    • ACS Nano 9 (2015) 5976-5983
    • DOI:10.1021/acsnano.5b00736
87. "Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors"
    • Y.-F. Lin, Y. Xu, C.-Y. Lin, Y.-W. Suen, M. Yamamoto, S. Nakaharai, K. Ueno, and K. Tsukagoshi
    • Adv. Mater. 27 (2015) 6612–6619
    • DOI:10.1002/adma.201502677
88. "Changes in structure and chemical composition of α-MoTe2 and β-MoTe2 during heating in vacuum conditions"
    • K. Ueno and K. Fukushima
    • Appl. Phys. Express 8 (2015) 095201 (4 pages)
    • DOI:10.7567/APEX.8.095201
89. "Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2"
    • L. Zhou, K. Xu, A. Zubair, A. Liao, W. Fang, F. Ouyang, Y.-H. Lee, K. Ueno, R. Saito, T. Palacios, J. Kong, and M. S. Dresselhaus
    • J. Am. Chem. Soc. 137 (2015) 11892–11895
    • DOI:10.1021/jacs.5b07452
90. "Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide"
    • M. Arai, R. Moriya, N. Yabuki, S. Masubuchi K. Ueno, and T. Machida
    • Appl. Phys. Lett. 107 (2015) 103107 (4 pages)
    • DOI:10.1063/1.4930311
91. ”Introduction to the Growth of Bulk Single Crystals of Two-Dimensional Transition-Metal Dichalcogenides"
    • K. Ueno
    • J. Phys. Soc. Jpn. 84 (2015) 121015 (6 pages)
    • DOI:10.7566/JPSJ.84.121015
92. "Solution-processed crystalline silicon double-heterojunction solar cells"
    • R. Devkota, Q. Liu, T. Ohki, J. Hossain, K. Ueno, and H. Shirai
    • Appl. Phys. Express 9 (2016) 022301 (4 pages)
    • DOI:10.7567/APEX.9.022301
93. "Investigating the chemical mist deposition technique for poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) on textured crystalline-silicon for organic/crystalline-silicon heterojunction solar cells"
    • J. Hossain, T. Ohki, K. Ichikawa, K. Fujiyama, K. Ueno, Y. Fujii, T. Hanajiri and H. Shirai
    • Jpn. J. Appl. Phys. 55 (2016) 031601 (7 pages)
    • DOI:10.7567/JJAP.55.031601
94. "Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts"
    • M. Yamamoto, S. Nakaharai, K. Ueno, and K. Tsukagoshi
    • Nano Lett., 16 (2016) 2720-2727
    • DOI:10.1021/acs.nanolett.6b00390
95. "Effect of substrate bias on mist deposition of conjugated polymer on textured crystalline-Si for efficient c-Si/organic heterojunction solar cells"
    • T. Ohki, K. Ichikawa, J. Hossain, Y. Fujii, T. Hanajiri, R. Ishikawa, K. Ueno, and H. Shirai
    • Phys. Status Solidi A 213 (2016) 1922–1925
    • DOI:10.1002/pssa.201532951
96. ”Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi Level Pinning"
    • S. Nakaharai, M. Yamamoto, K. Ueno, and K. Tsukagoshi
    • ACS Appl. Mater. Interfaces 8 (2016) 14732–14739
    • DOI:10.1021/acsami.6b02036
97. "Correlation between Fine Structure of Spin-Coated PEDOT:PSS and Photovoltaic Performance of Organic/Crystalline-Silicon Heterojunction Solar Cells"
    • S. Funada, T. Ohki, Q. Liu, J. Hossain, Y. Ishimaru, K. Ueno, and H. Shirai
    • J. Appl. Phys. 120 (2016) 033103 (7 pages)
    • DOI:10.1063/1.4958845
98. "Monolayer 1T-NbSe2 as a Mott insulator"
    • Y. Nakata, K. Sugawara, R. Shimizu, Y. Okada, P. Han, T. Hitosugi, K. Ueno, T. Sato and T. Takahashi
    • NPG Asia Materials 8 (2016) e321 (5 pages)
    • DOI:10.1038/am.2016.157
99. "Synthesis of High-Quality Large-Area Homogenous 1T′ MoTe2 from Chemical Vapor Deposition"
    • L. Zhou, A. Zubair, Z. Wang, X. Zhang, F. Ouyang, K. Xu, W. Fang, K. Ueno, J. Li, T. Palacios, J. Kong, and M. S. Dresselhaus
    • Adv. Mater. 28 (2016) 9526–9531
    • DOI:10.1002/adma.201602687
100. "Role of Isopropyl Alcohol Solvent in the Synthesis of Organic–Inorganic Halide CH(NH2)2PbIxBr3–x Perovskite Thin Films by a Two-Step Method"
     • T. Yamanaka, K. Masumori, R. Ishikawa, K. Ueno, and H. Shirai
     • J. Phys. Chem. C 120 (2016) 25371–25377
     • DOI:10.1021/acs.jpcc.6b07527
101. "Nafion-Modified PEDOT:PSS as a Transparent Hole-Transporting Layer for High-Performance Crystalline-Si/Organic Heterojunction Solar Cells with Improved Light Soaking Stability"
     • J. Hossain, Q. Liu, T. Miura, K. Kasahara, D. Harada, R. Ishikawa, K. Ueno, and H. Shirai
     • ACS Appl. Mater. Interfaces 8 (2016) 31926–31934
     • DOI:10.1021/acsami.6b10272
102. "Fabrication of {CH(NH2)2}1-xCsxPbI3 perovskite thin films by two-step method and its application to thin film solar cells"
     • R. Ishikawa, K. Ueno, and H. Shirai
     • Chem. Lett. 46 (2017) 612-615
     • DOI:10.1246/cl.161194
103. "Sensitive Phonon-Based Probe for Structure Identification of 1T′ MoTe2"
     • L. Zhou, S. Huang, Y. Tatsumi, L. Wu, H. Guo, Y.-Q. Bie, K. Ueno, T. Yang, Y. Zhu, J. Kong, R. Saito, and M. Dresselhaus
     • J. Am. Chem. Soc. 139 (2017) 8396–8399
     • DOI:10.1021/jacs.7b03445
104. "Barium hydroxide hole blocking layer for front- and back-organic/crystalline Si heterojunction solar cells"
     • J. Hossain, K. Kasahara, D. Harada, A. T. M. S. Islam, R. Ishikawa, K. Ueno, T. Hanajiri, Y. Nakajima, Y. Fujii, M. Tokuda, and H. Shirai
     • J. Appl. Phys. 122 (2017) 055101 (2017) (8 pages)
     • DOI:10.1063/1.4985812
105. "Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2"
     • Y. Yamasaki, R. Moriya, M. Arai, S. Masubuchi, S. Pyon, T. Tamegai, K. Ueno and T. Machida
     • 2D Materials 4 (2017) 041007 (10 pages)
     • DOI:10.1088/2053-1583/aa8a2b
106. "Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping"
     • Y.-M. Chang, S.-H. Yang, C.-Y. Lin, C.-H. Chen, C.-H. Lien, W.-B. Jian, K. Ueno, Y.-W. Suen, K. Tsukagoshi and Y.-F. Lin
     • Adv. Mater. 30 (2018) 1706995
     • DOI:10.1002/adma.201706995
107. "Anisotropic Band Splitting in Monolayer NbSe2: Implications for Superconductivity and Charge Density Wave"
     • Y. Nakata, K. Sugawara, S. Ichinokura, Y. Okada, T. Hitosugi, T. Koretsune, K. Ueno, S. Hasegawa, T. Takahashi, and T. Sato
     • npj 2D Materials and Applications 2 (2018) 12
     • DOI:10.1038/s41699-018-0057-3
108. "Fabrication and Surface Engineering of Two-Dimensional SnS Toward Piezoelectric Nanogenerator Application"
     • N. Higashitarumizu, H. Kawamoto, K. Ueno and K. Nagashio
     • MRS Advances 3 (2018) 2809-2814
     • DOI:10.1557/adv.2018.404
109. "Pronounced photogating effect in atomically thin WSe2 with a self-limiting surface oxide layer"
     • M. Yamamoto, K. Ueno and K. Tsukagoshi
     • Appl. Phys. Lett. 112 (2018) 181902 (5 pages)
     • DOI:10.1063/1.5030525
110. "Ultrathin Bismuth Film on 1T-TaS2: Structural Transition and Charge-Density-Wave Proximity Effect"
     • K. Yamada, S. Souma, K. Yamauchi, N. Shimamura, K. Sugawara, C. Trang, T. Oguchi, K. Ueno, T. Takahashi, T. Sato
     • Nano Lett. 18 (2018) 3235–3240
     • DOI:10.1021/acs.nanolett.8b01003
111. "Fabrication of [CH(NH2)2]0.8Cs0.2PbI3 perovskite thin films for n-i-p planar-structure solar cells by a one-step method using 1-cyclohexyl-2-pyrrolidone as an additive"
     • R. Ishikawa, K. Ueno and H. Shirai
     • Chem. Lett. 47 (2018) 905-908
     • DOI:10.1246/cl.180216
112. "2-Dimensional Tunnel FETs with a Stable Charge-Transfer-Type p+-WSe2 Source"
     • J. He, N. Fang, K. Nakamura, K. Ueno, T. Taniguchi, K. Watanabe, and K. Nagashio
     • Adv. Electron. Mater. 4 (2018) 1800207
     • DOI:10.1002/aelm.201800207
113. "Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation"
     • N. Higashitarumizu, H. Kawamoto, M. Nakamura, K. Shimamura, N. Ohashi, K. Ueno and K. Nagashio
     • Nanoscale 10 (2018) 22474-22483
     • DOI:10.1039/C8NR06390G
114. "Site-dependence of relationships between photoluminescence and applied electric field in monolayer and bilayer molybdenum disulfide"
     • J. Nozaki, H. Nishidome, M. Maruyama, S. Okada, S. Kusaba, K. Tanaka, K. Ueno, Y. Yomogida, and K. Yanagi
     • Jpn. J. Appl. Phys. 58 (2019) 015001
     • DOI:10.7567/1347-4065/aaead2
115. "Gate-Tunable Thermal Metal-Insulator Transition in VO2 Monolithically Integrated into a WSe2 Field-Effect Transistor"
     • M. Yamamoto, R. Nouchi, T. Kanki, A. Hattori, K. Watanabe, T. Taniguchi, K. Ueno, H. Tanaka
     • ACS Appl. Mater. Interfaces 11 (2019) 3224–3230
     • DOI:10.1021/acsami.8b18745
116. "Highly crystalline large-grained perovskite films using two additives without an antisolvent for high-efficiency solar cells"
     • R. Ishikawa, K. Ueno and H. Shirai
     • Thin Solid Films 679 (2019) 27-34
     • DOI:10.1016/j.tsf.2019.03.030
117. "Dimensionality reduction and band quantization induced by potassium intercalation in 1T-HfTe2
     • Y. Nakata, K. Sugawara, A. Chainani, K. Yamauchi, K. Nakayama, S. Souma, P.-Y. Chuang, C.-M. Cheng, T. Oguchi, K. Ueno, T. Takahashi, and T. Sato
     • Phys. Rev. Mater. 3 (2019) 071001(R)
     • DOI:10.1103/PhysRevMaterials.3.071001
118. "Barrier Formation at the Contacts of Vanadium Dioxide and Transition-Metal Dichalcogenides"
     • M. Yamamoto, R. Nouchi, T. Kanki, S. Nakaharai, A. N. Hattori, K. Watanabe, T. Taniguchi, Y. Wakayama, K. Ueno, and H. Tanaka
     • ACS Appl. Mater. Interfaces 11 (2019) 36871-36879
     • DOI:10.1021/acsami.9b13763
119. "Role of the solvent in large crystal grain growth of inorganic-organic halide FA0.8Cs0.2PbIxBr3−x perovskite thin films monitored by ellipsometry
     • K. Kawamura, R. Ishikawa, Y. Wasai, N. Nabatova-Gabain, S. Kurosu, T. Ukai, M. Tokuda, Y. Fujii, T. Hanajiri, K. Ueno, and H. Shirai
     • J. Vac. Sci. & Technol. B 37 (2019) 062401
     • DOI:10.1116/1.5123399
120. "Selective oxidation of the surface layer of bilayer WSe2 by laser heating"
     • H. Shioya, K. Tsukagoshi, K. Ueno, and A. Oiwa
     • Jpn. J. Appl. Phys. 58 (2019) 120903
     • DOI:10.7567/1347-4065/ab50da
121. "Oxygen-sensitive layered MoTe2 channels for environmental detection"
     • S.-H Yang, C.-Y. Lin, Y.-M. Chang, M. Li, K.-C. Lee, C.-F. Chen, F.-S. Yang, C.-H Lien, K. Ueno, K. Watanabe, T. Taniguchi, K. Tsukagoshi, Y.-F. Lin
     • ACS Appl. Mater. Interfaces 11 (2019) 47047-47053
     • DOI:10.1021/acsami.9b15036
122. "Self-assembled Fluorinated Polymer Passivation Layer for Efficient Perovskite Thin-film Solar Cells"
     • Y. Moriya, R. Ishikawa, S. Akiyama, K. Ueno, H. Shirai
     • Chem. Lett. 49 (2020) 87-90
     • DOI:10.1246/cl.190692
123. "Low-temperature growth of crystalline tungsten disulfide thin films by using organic liquid precursors"
     • Y. Ikeda and K. Ueno
     • Jpn. J. Appl. Phys. 59 (2020) SCCC04
     • DOI:10.7567/1347-4065/ab489a
124. "Improved efficiency of methylammonium-free perovskite thin film solar cells by fluorinated ammonium iodide treatment"
     • R. Ishikawa, K. Ueno, H. Shirai
     • Organic Electronics 78 (2020) 105596
     • DOI:10.1016/j.orgel.2019.105596
125. "Investigation of laser-induced-metal phase of MoTe2 and its contact property via scanning gate microscopy"
     • K. Sakanashi, H. Ouchi, K. Kamiya, P. Krüger, K. Miyamoto, T. Omatsu, K. Ueno, K. Watanabe, T. Taniguchi, J. Bird, N. Aoki
     • Nanotechnology 31 (2020) 205205
     • DOI:10.1088/1361-6528/ab71b8
126. "Ultrafast dynamics of the low frequency shear phonon in 1T'-MoTe2"
     • T. Fukuda, K. Makino, Y. Saito, P. Fons, A.V. Kolobov, K. Ueno, and M. Hase
     • Appl. Phys. Lett. 116 (2020) 093103
     • DOI:10.1063/1.5143485
127. "Synthesis of AlOx thin films by atmospheric pressure mist chemical vapor deposition for surface passivation and electrical insulator layers"
     • A. Rajib, K. M. Enamul, S. Kurosu, T. Ukai, M. Tokuda, Y. Fujii, T. Hanajiri, R. Ishikawa, K. Ueno, and H. Shirai
     • J. Vac. Sci. Technol. A 38 (2020) 033413
     • DOI:10.1116/1.5143273
128. "Flat bands in twisted bilayer transition metal dichalcogenides"
     • Z. Zhang, Y. Wang, K. Watanabe, T. Taniguchi, K. Ueno, E. Tutuc and B.J. LeRoy
     • Nature Physics 16 (2020)1093–1096
     • DOI:10.1038/s41567-020-0958-x
     • View-only access is here
129. "Effect of thermally annealed atomic-layer-deposited AlOx/chemical tunnel oxide stack layer at the PEDOT:PSS/n-type Si interface to improve its junction quality"
     • Md E. Karim, Y. Nasuno, A. Kuddus, T. Ukai, S. Kurosu, M. Tokuda, Y. Fujii, T. Hanajiri, R. Ishikawa, K. Ueno, and H. Shirai
     • J. Appl. Phys. 128 (2020) 045305
     • DOI:10.1063/5.0007918
130. "Facile and reversible carrier-type manipulation of layered MoTe2 toward long-term stable electronics"
     • M. Li, C.-Y. Lin, Y.-M. Chang, S.-H. Yang, M.-P. Lee, C.-F. Chen, K.-C. Lee, F.-S. Yang, Y. Chou, Y.-C. Lin, K. Ueno, Y. Shi, Y.-C. Chou, K. Tsukagoshi, Y.-F. Lin
     • ACS Appl. Mater. Interfaces 12 (2020) 42918-42924
     • DOI:10.1021/acsami.0c09922
131. "Exciton diffusion in hBN-encapsulated monolayer MoSe2"
     • T. Hotta, S. Higuchi, A. Ueda, K. Shinokita, Y. Miyauchi, K. Matsuda, K. Ueno, T. Taniguchi, K. Watanabe, and R. Kitaura
     • Phys. Rev. B 102 (2020) 115424
     • DOI:10.1103/PhysRevB.102.115424
132. "Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage"
     • T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio
     • Small 16 (2020) 2004907
     • DOI:10.1002/smll.202004907
133. "All 2D heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality"
     • K. Nakamura, N. Nagamura, K. Ueno, T. Taniguchi, K. Watanabe, K. Nagashio
     • ACS Appl. Mater. Interfaces 12 (2020) 51598-51606
     • DOI:10.1021/acsami.0c13233
134. "Enhanced Exciton-Exciton Collisions in an Ultraflat Monolayer MoSe2 Prepared through Deterministic Flattening"
     • T. Hotta, A. Ueda, S. Higuchi, M. Okada, T. Shimizu, T. Kubo, K. Ueno, T. Taniguchi, K. Watanabe, R. Kitaura
     • ACS Nano 15 (2021) 1370–1377
     • DOI:10.1021/acsnano.0c08642
135. "Twist Angle-Dependent Interlayer Exciton Lifetimes in van der Waals Heterostructures"
     • J. Choi, M. Florian, A. Steinhoff, D. Erben , K. Tran, D. S. Kim, L. Sun, J. Quan, R. Claassen, S. Majumder, J. A. Hollingsworth, T. Taniguchi, K. Watanabe, K. Ueno, A. Singh, G. Moody, F. Jahnke, and X. Li
     • Phys. Rev. Lett. 126 (2021) 047401
     • DOI:10.1103/PhysRevLett.126.047401
136. "AlOx Thin Films Synthesized by Mist Chemical Vapor Deposition, Monitored by a Fast-Scanning Mobility Particle Analyzer, and Applied as a Gate Insulating Layer in the Field-Effect Transistors"
     • A. Rajib, A. Kuddus, T. Shida, K. Ueno, and H. Shirai
     • ACS Appl. Electron. Mater. 3 (2021) 658–667
     • DOI:10.1021/acsaelm.0c00758
137. "Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory"
     • T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio
     • ACS nano 15 (2021) 6658–6668
     • DOI:10.1021/acsnano.0c10005
138. "Intrinsic Electronic Transport Properties and Carrier Densities in PtS2 and SnSe2: Exploration of n+-Source for 2D Tunnel FETs"
     • Y. Sato, T. Nishimura, D. Duanfei, K. Ueno, K. Shinokita, K. Matsuda and K. Nagashio
     • Adv. Electron. Mater. 7 (2021) 2100292
     • DOI:10.1002/aelm.202100292
139. "Mist chemical vapor deposition of crystalline MoS2 atomic layer films using sequential mist supply mode and its application in field-effect transistors"
     • A. Kuddus, A. Rajib, K. Yokoyama, T. Shida, K. Ueno and H. Shirai
     • Nanotechnology 33 (2022) 045601
     • DOI:10.1088/1361-6528/ac30f4
140. "Quantitative Determination of Contradictory Band Gap Values of Bulk PdSe2 from Electrical Transport Properties"
     • W. Nishiyama, T. Nishimura, K. Ueno, T. Taniguchi, K. Watanabe, and K. Nagashio
     • Adv. Func. Mater. 32 (2022) 2108061
     • DOI:10.1002/adfm.202108061
141. "Photo-induced Tellurium segregation in MoTe2"
     • T. Fukuda, R. Kaburauchi, Y. Saito, K. Makino, P. Fons, K. Ueno and M. Hase
     • Phys. Stat. Solidi RRL, in press (2022)
     • DOI:10.1002/pssr.202100633
142. "Mist chemical vapor deposition of Al1−xTixOy thin films and their application to a high dielectric material"
     • A. Rajib, A. Kuddus, K. Yokoyama, T. Shida, K. Ueno, and H. Shirai
     • J. Appl. Phys. 131 (2022) 105301
     • DOI:10.1063/5.0073719

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